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| 型号： | NTQD6866R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 20V 4.7A 8TSSOP |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 4,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 32 毫欧 @ 6.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 16V |
| 功率 - 最大： | 940mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 带卷 (TR) |
| 其它名称： | NTQD6866R2GOS |
NTQD6866R2
Power MOSFET
6.9 Amps, 20 Volts
N ? Channel TSSOP ? 8
Features
? New Low Profile TSSOP ? 8 Package
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Diode Exhibits High Speed, Soft Recovery
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperatures
? Pb ? Free Package is Available
Applications
? Power Management in Portable and Battery ? Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Phones
? Battery Applications
? NoteBook PC
http://onsemi.com
6.9 AMPERES
20 VOLTS
30 m W @ V GS = 4.5 V
N ? Channel N ? Channel
D D
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
G1
G2
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ? Single Die
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Pulsed Drain Current (Note 4)
V DSS
V DGR
V GS
R q JA
P D
I D
I DM
20
20
" 12
62.5
2.0
6.9
24
Vdc
Vdc
Vdc
° C/W
W
Adc
Adc
8
S1
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
D D D D
1
Thermal Resistance ? Single Die
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance ? Single Die
Junction ? to ? Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 20 Vdc, V GS = 5.0 Vdc,
Peak I L = 5.5 Apk, L = 10 mH, R G = 25 W )
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
E AS
88
1.42
5.8
4.6
20
132
0.94
4.7
3.8
14
? 55 to
+150
150
° C/W
W
Adc
Adc
Adc
° C/W
W
Adc
Adc
Adc
° C
mJ
1 866
YWW
TSSOP ? 8 A G
CASE 948S
PLASTIC
S1 G1 S2 G2
866 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
Device Package Shipping ?
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T L
260
° C
NTQD6866R2
TSSOP ? 8
4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto a 2 ″ square FR ? 4 board
(1 in sq, 2 oz Cu 0.06 ″ thick single ? sided), t < 10 seconds.
2. Mounted onto a 2 ″ square FR ? 4 board
(1 in sq, 2 oz Cu 0.06 ″ thick single ? sided), t = ss.
3. Minimum FR ? 4 or G ? 10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
NTQD6866R2G TSSOP ? 8 4000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 3
1
Publication Order Number:
NTQD6866R2/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTQD6968 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 6.6 Amps, 20 Volts |
| NTQD6968N | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTQD6968NR2 | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTQD6968NR2G | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTQD6968R2 | 功能描述:MOSFET PWR N-CH 6.6A 20V 8TSSOP RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
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