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| 型号： | NTR4101PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1.8A SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 1.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 675pF @ 10V |
| 功率 - 最大： | 420mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTR4101PT1GOSDKR |
NTR4101P, NTRV4101P
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient ? Steady State (Note 1)
Junction ? to ? Ambient ? t < 10 s (Note 1)
Junction ? to ? Ambient ? Steady State (Note 2)
Symbol
R q JA
R q JA
R q JA
Max
170
100
300
Unit
° C/W
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 4)
(V GS = 0 V, I D = ? 250 m A)
Zero Gate Voltage Drain Current (Note 4)
(V GS = 0 V, V DS = ? 16 V)
Gate ? to ? Source Leakage Current
(V GS = ± 8.0 V, V DS = 0 V)
V (BR)DSS
I DSS
I GSS
? 20
? 1.0
± 100
V
m A
nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(V GS = V DS , I D = ? 250 m A)
Drain ? to ? Source On ? Resistance
(V GS = ? 4.5 V, I D = ? 1.6 A)
(V GS = ? 2.5 V, I D = ? 1.3 A)
(V GS = ? 1.8 V, I D = ? 0.9 A)
Forward Transconductance (V DS = ? 5.0 V, I D = ? 2.3 A)
V GS(th)
R DS(on)
g FS
? 0.4
? 0.72
70
90
112
7.5
? 1.2
85
120
210
V
m W
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C iss
675
pF
Output Capacitance
Reverse Transfer Capacitance
(V GS = 0 V, f = 1 MHz, V DS = ? 10 V)
C oss
C rss
100
75
Total Gate Charge
Gate ? to ? Source Gate Charge
Gate ? to ? Drain “Miller” Charge
Gate Resistance
(V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 1.6 A)
(V DS = ? 10 V, I D = ? 1.6 A)
(V DS = ? 10 V, I D = ? 1.6 A)
Q G(tot)
Q GS
Q GD
R G
7.5
1.2
2.2
6.5
8.5
nC
nC
nC
W
SWITCHING CHARACTERISTICS (Note 5)
Turn ? On Delay Time
t d(on)
7.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V GS = ? 4.5 V, V DS = ? 10 V,
I D = ? 1.6 A, R G = 6.0 W )
t r
t d(off)
t f
12.6
30.2
21.0
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
(V GS = 0 V, I S = ? 2.4 A)
(V GS = 0 V,
dI SD /dt = 100 A/ m s, I S = ? 1.6 A)
V SD
t rr
t a
t b
Q rr
? 0.82
12.8
9.9
3.0
1008
? 1.2
15
V
ns
ns
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
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