参数资料
型号: NVD5867NLT4G
厂商: ON Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET N-CH 60V 18A DPAK-4
标准包装: 2,500
系列: *
NVD5867NL
TYPICAL PERFORMANCE CURVES
40
35
10V
4.5 V
T J = 25 ° C
4V
40
35
V DS ≥ 10 V
30
25
20
3.8 V
3.6 V
30
25
20
15
10
5
3.4 V
3.2 V
3.0 V
15
10
5
T J = 125 ° C
T J = 25 ° C
0
0
1
2
3
4
2.8 V
5
0
2
T J = ? 55 ° C
3
4
5
0.060
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
I D = 22 A
T J = 25 ° C
0.040
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
T J = 25 ° C
0.050
0.040
0.030
0.035
0.030
0.025
V GS = 4.5 V
V GS = 10 V
0.020
3
4
5
6
7
8
9
10
0.020
5
10
15
20
2.4
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
10000
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
2.2
2.0
1.8
1.6
1.4
I D = 22 A
V GS = 10 V
1000
V GS = 0 V
T J = 150 ° C
1.2
1.0
0.8
100
T J = 125 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
175
10
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Drain Voltage
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