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参数资料
| 型号： | NX3008CBKS |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 - 30 V, 350 - 200 mA N-P-channel Trench MOSFET |
| 中文描述： | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC, SC-88, 6 PIN |
| 文件页数： | 11/21页 |
| 文件大小： | 1509K |
| 代理商： | NX3008CBKS |
NX3008CBKS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 July 2011
11 of 21
NXP Semiconductors
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
V
DS
> I
D
x R
DSon
(1) T
j
= 25 °C
(2) T
j
= 150 °C
Fig 13. TR1: Transfer characteristics: drain current as
a function of gate-source voltage; typical
values
Fig 14. TR1: Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
I
D
= 0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; V
GS
= 0 V
(1)C
iss
(2)C
oss
(3)C
rss
Fig 16. TR1: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
Fig 15. TR1: Gate-source threshold voltage as a
function of junction temperature
001aao271
V
GS
(V)
0
3
2
1
0.2
0.1
0.3
0.4
I
D
(A)
0.0
(2)
(1)
T
j
(C)
-60
180
120
0
60
001aao272
1.0
0.5
1.5
2.0
a
0.0
T
j
(C)
-60
180
120
0
60
001aao273
0.5
1.0
1.5
V
GS(th)
(V)
0.0
(2)
(1)
(3)
001aao274
V
DS
(V)
10
-1
10
2
10
1
10
10
2
C
(pF)
1
(1)
(2)
(3)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NX3008CBKS,115 | 功能描述:MOSFET 30/30V, 350/200 MA N/P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008CBKV | 制造商:NXP Semiconductors 功能描述:MOSFET N/P CH 30/30V 400/220MASOT666 制造商:NXP Semiconductors 功能描述:MOSFET, N/P CH, 30/30V, 400/220MA,SOT666 制造商:NXP Semiconductors 功能描述:MOSFET, N/P CH, 30/30V, 400/220MA,SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:330mW ;RoHS Compliant: Yes |
| NX3008CBKV,115 | 功能描述:MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008NBK | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 400MA SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23, Transistor Polarity:N Channel, Continuous Drain |
| NX3008NBK,215 | 功能描述:MOSFET 30V 400 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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