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| 型号： | NX3008CBKV |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 - 30 V, 400 - 220 mA N-P-channel Trench MOSFET |
| 中文描述： | 400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 1/21页 |
| 文件大小： | 1473K |
| 代理商： | NX3008CBKV |
1.
Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Level shifter
Power supply converter
Load switch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
TR2 (P-channel)
V
DS
V
GS
I
D
TR1 (N-channel)
V
DS
V
GS
I
D
TR1 (N-channel), Static characteristics
R
DSon
drain-source on-state
resistance
TR2 (P-channel), Static characteristics
R
DSon
drain-source on-state
resistance
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
ST6
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
-
-8
-
-
-
-30
8
-220
V
V
mA
V
GS
= -4.5 V; T
amb
= 25 °C
[1]
-
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
-
-8
-
-
-
30
8
400
V
V
mA
V
GS
= 4.5 V; T
amb
= 25 °C
[1]
-
V
GS
= 4.5 V; I
D
= 350 mA;
T
j
= 25 °C
-
1
1.4
V
GS
= -4.5 V; I
D
= -200 mA;
T
j
= 25 °C
-
2.8
4.1
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| NX3008NBKS | 30 V, 350 mA dual N-channel Trench MOSFET |
| NX3008NBKT | 30 V, 350 mA N-channel Trench MOSFET |
| NX3008NBKV | 30 V, 400 mA dual N-channel Trench MOSFET |
| NX3008NBKW | 30 V, 350 mA N-channel Trench MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NX3008CBKV,115 | 功能描述:MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008NBK | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 400MA SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23, Transistor Polarity:N Channel, Continuous Drain |
| NX3008NBK,215 | 功能描述:MOSFET 30V 400 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008NBKMB | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:30 V, single N-channel Trench MOSFET |
| NX3008NBKMB,315 | 功能描述:MOSFET N-Chan 30V 530mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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