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参数资料
型号： NX3008CBKS
厂商： NXP SEMICONDUCTORS
元件分类： 小信号晶体管
英文描述： 30 - 30 V, 350 - 200 mA N-P-channel Trench MOSFET
中文描述： 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装： PLASTIC, SC-88, 6 PIN
文件页数： 8/21页
文件大小： 1509K
代理商： NX3008CBKS
NX3008CBKS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 July 2011
8 of 21
NXP Semiconductors
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
7.
Characteristics
Table 7.
Symbol
TR2 (P-channel), Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
V
GSth
gate-source threshold
voltage
I
DSS
drain leakage current
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
I
D
= -250 μA; V
GS
= 0 V; T
j
= 25 °C
-30
-
-
V
I
D
= -250 μA; V
DS
= V
GS
; T
j
= 25 °C
-0.6
-0.9
-1.1
V
V
DS
= -30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= -30 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -200 mA; T
j
= 25 °C
V
GS
= -2.5 V; I
D
= -10 mA; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -200 mA; T
j
= 150 °C
V
DS
= -10 V; I
D
= -200 mA; T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.2
-0.2
-10
-10
-1
-1
2.8
5.3
5.3
160
-1
-10
-1
-1
-
-
-
-
4.1
6.5
7.8
-
μA
μA
μA
μA
nA
nA
nA
nA
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
g
fs
TR1 (N-channel), Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
V
GSth
gate-source threshold
voltage
I
DSS
drain leakage current
transfer conductance
mS
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
30
-
-
V
I
D
= 250 μA; V
DS
= V
GS
; T
j
= 25 °C
0.6
0.9
1.1
V
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 350 mA; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 350 mA; T
j
= 150 °C
V
GS
= 2.5 V; I
D
= 200 mA; T
j
= 25 °C
V
GS
= 1.8 V; I
D
= 10 mA; T
j
= 25 °C
V
DS
= 10 V; I
D
= 350 mA; T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
10
10
1
1
1
1.8
1.4
2
310
1
10
1
1
-
-
-
-
1.4
2.5
2.1
2.8
-
μA
μA
μA
μA
nA
nA
nA
nA
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
g
fs
TR1 (N-channel), Dynamic characteristics
Q
G(tot)
total gate charge
Q
GS
gate-source charge
Q
GD
gate-drain charge
transfer conductance
mS
V
DS
= 15 V; I
D
= 350 mA; V
GS
= 4.5 V;
T
j
= 25 °C
-
-
-
0.52
0.17
0.08
0.68
-
-
nC
nC
nC
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NX3008CBKV,115 功能描述:MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NX3008NBK 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 400MA SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23, Transistor Polarity:N Channel, Continuous Drain
NX3008NBK,215 功能描述:MOSFET 30V 400 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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