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参数资料
| 型号： | PCZ33937AEKR2 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 运动控制电子 |
| 英文描述： | AC MOTOR CONTROLLER, 0.8 A, PDSO54 |
| 封装： | 0.65 MM PITCH, ROHS COMPLIANT, SOIC-54 |
| 文件页数： | 47/47页 |
| 文件大小： | 750K |
| 代理商： | PCZ33937AEKR2 |
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Analog Integrated Circuit Device Data
Freescale Semiconductor
9
33937
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
CHARGE PUMP
Charge Pump
High Side Switch On Resistance
Low Side Switch On Resistance
RDS(on)_HS
RDS(on)_LS
VTHREG
–
250
6.0
5.0
500
10
9.4
900
Ω
mV
IOUT = 40 mA, 6.0 V < VSYS < 8.0 V
IOUT = 40 mA, VSYS > = 8.0 V
VCP
8.5
12
9.5
–
V
GATE DRIVE
High Side Driver On Resistance (Sourcing)
VPWR = VSUP = 16 V, -40°C ≤ TA ≤ 25°C
VPWR = VSUP = 16 V, 25°C < TA ≤ 135°C
RDS(ON)_H_SRC
–
6.0
8.5
Ω
High Side Driver On Resistance (Sinking)
VPWR = VSUP = 16 V
RDS(ON)_H_SINK
–
3.0
Ω
IHS_INJ
–
0.5
A
Low Side Driver On Resistance (Sourcing)
VPWR = VSUP = 16 V, -40°C ≤ TA ≤ 25°C
VPWR = VSUP = 16 V, 25°C < TA ≤ 135°C
RDS(ON)_L_SRC
–
6.0
8.5
Ω
Low Side Driver On-Resistance (Sinking)
VPWR = VSUP = 16 V
RDS(ON)_L_SINK
–
3.0
Ω
Low Side Current Injection Allowed Without Malfunction(17), (18)
ILS_INJ
–
0.5
Α
Gate Source Voltage, VPWR = VSUP = 40 V
Low Side, IGATE = 0
VGS_H
VGS_L
13
14.8
15.4
16.5
17
V
High Side Gate Drive Output Leakage Current, Per Output(20)
IHS_LEAK
–
18
A
Notes
15.
When VLS is this amount below the normal VLS linear regulation threshold, the charge pump is enabled.
16.
VSYS is the system voltage on the input to the charge pump. With recommended external components (1.0 F, MUR 120 diode). The
Charge Pump is designed to supply the gate currents of a system with 100 A FETs in a 12 V application.
17.
This parameter is a design characteristic, not production tested.
18.
Current injection only occurs during output switch transitions. The IC is immune to specified injected currents for a duration of
approximately 1.0s after an output switch transition. 1.0 s is sufficient for all intended applications of this IC.
19.
If a slightly higher gate voltage is required, larger bootstrap capacitors are required. At high duty cycles, the bootstrap voltage may not
recover completely, leading to a higher output on-resistance. This effect can be minimized by using low ESR capacitors for the bootstrap
and the VLS capacitors.
20.
A small internal charge pump will supply up to 30
μA nominal to compensate for leakage on the High Side FET gate output and maintain
voltages after bootstrap events. It is not intended for external components to be connected to the High Side FET gate, but small amounts
of additional leakage can be accommodated. See Figures 11 through 14 for typical load margins.
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 8.0 V
≤ VPWR = VSUP ≤ 40 V, -40°C ≤ TA ≤ 135°C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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