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| 型号： | PESD12VL2BT/S911,2 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 10/14页 |
| 文件大小： | 0K |
| 描述： | DIODE DUAL BI ESD PROT SOT23-3 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 14.2V |
| 功率（瓦特）： | 200W |
| 电极标记： | 2 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
| 其它名称： | 568-7331-2 934063506215 PESD12VL2BT/S911,2-ND |
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
7. Application information
The PESDxL2BT series is designed for the protection of two bidirectional signal lines from
the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on
lines where the signal polarities are above and below ground. The PESDxL2BT series
provides a surge capability of up to 350 W per line for an 8/20 μ s waveform.
line 1 to be protected
line 2 to be protected
PESDxL2BT
GND
006aaa163
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxL2BT as close to the input terminal or connector as possible.
2. The path length between the PESDxL2BT and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESDXL2BT_SER_2
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 August 2009
10 of 14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD12VS1UA | 制造商:NXP Semiconductors 功能描述:DIODE ESD LOW CAPACITANCE SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Power Dissipatio 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Power Dissipation Pd:360mW, Clamping Voltage Vc Max:27V, Diode Case Style:SOD-323, No. of Pins:2, MSL:MSL 1 - Unlimited , RoHS Compliant: Yes |
| PESD12VS1UA,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 PROTECTION DIODE RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PESD12VS1UA115 | 制造商:NXP Semiconductors 功能描述:ESD PROTECTION DIODE SOD-323- |
| PESD12VS1UB | 制造商:NXP Semiconductors 功能描述:DIODE TVS SOD-523 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOD-523 |
| PESD12VS1UB T/R | 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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