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参数资料
| 型号： | PESD3V3S2UAT,215 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 10/13页 |
| 文件大小： | 0K |
| 描述： | DIODE DBL ESD PROTECTION SOT23 |
| 产品培训模块： | ESD Protection Diodes ESD Standards and Products |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 5.2V |
| 功率（瓦特）： | 330W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
NXP Semiconductors
Double ESD protection diodes
in SOT23 package
Product data sheet
PESDxS2UAT series
APPLICATION INFORMATION
The PESDxS2UAT series can protect up to two lines against damage caused by unidirectional ElectroStatic Discharge
(ESD) and surge pulses. The PESDxS2UAT series can protect lines whose signal polarities are below ground.
PESDxS2UAT series provide a surge capability of up to 330 Watts peak pulse power per line for a 8/20 μ s waveform.
line 1 to be protected
line 2 to be protected
PESDxS2UAT
ground
unidirectional protection
of two lines
line 1 to be protected
PESDxS2UAT
ground
bidirectional protection
of one line
001aaa179
Fig.10 Typical application: ESD protection of data lines.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:
1. Place the PESDxS2UAT as close as possible to the input terminal or connector.
2. Minimize the path length between the PESDxS2UAT and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of transient return paths to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible.
9. Use vias for multi-layer printed-circuit boards.
2004 Feb 18
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD3V3S2UQ | 制造商:NXP Semiconductors 功能描述:DIODE TVS DUAL SOT-663 制造商:NXP Semiconductors 功能描述:DIODE, TVS, DUAL, SOT-663 制造商:NXP Semiconductors 功能描述:DIODE, TVS, DUAL, SOT-663; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:3.3V; Breakdown Voltage Min:5.2V; Breakdown Voltage Max:6V; Clamping Voltage Vc Max:5.6V; Peak Pulse Current Ippm:15A; Diode Case Style:SOT-663; ;RoHS Compliant: Yes |
| PESD3V3S2UQ,115 | 功能描述:TVS二极管阵列 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD3V3S2UT | 制造商:NXP Semiconductors 功能描述:DIODE TVS SOT-23 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOT-23 |
| PESD3V3S2UT,215 | 功能描述:TVS二极管阵列 3.3V DUAL ESD PROTCT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD3V3S2UT215 | 制造商:NXP Semiconductors 功能描述:ESD DIODE 20V Dual Common Anode SOT-2 |
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