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参数资料
| 型号： | PESD3V3S2UAT,215 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 2/13页 |
| 文件大小： | 0K |
| 描述： | DIODE DBL ESD PROTECTION SOT23 |
| 产品培训模块： | ESD Protection Diodes ESD Standards and Products |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 5.2V |
| 功率（瓦特）： | 330W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
NXP Semiconductors
Double ESD protection diodes
in SOT23 package
FEATURES
Product data sheet
PESDxS2UAT series
QUICK REFERENCE DATA
? Unidirectional ESD protection of up to two lines
? Common-cathode configuration
? Max. peak pulse power: P pp = 330 W at t p = 8/20 μ s
SYMBOL
V RWM
PARAMETER
reverse stand-off
voltage
VALUE
3.3, 5, 12, 15
and 24
UNIT
V
? Low clamping voltage: V (CL)R = 20 V at I pp = 18 A
? Ultra-low reverse leakage current: I RM < 700 nA
? ESD protection > 30 kV
? IEC 61000-4-2; level 4 (ESD)
C d
diode capacitance
V R = 0 V;
f = 1 MHz
number of
protected lines
207, 152, 38, 32 pF
and 23
2
? IEC 61000-4-5 (surge); I pp = 18 A at t p = 8/20 μ s.
PINNING
APPLICATIONS
? Computers and peripherals
? Communication systems
? Audio and video equipment
? Data lines
? CAN bus protection.
DESCRIPTION
Unidirectional double ESD protection diodes in common
cathode configuration in the SOT23 plastic package.
Designed to protect up to two transmission or data lines
PIN
1
2
3
1
DESCRIPTION
anode 1
anode 2
common cathode
against damage from ElectroStatic Discharge (ESD) and
other transients.
2
3
1
2
3
MARKING
TYPE NUMBER
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
MARKING CODE (1)
*7A
*7B
*7C
001aaa401
sym002
PESD15VS2UAT
PESD24VS2UAT
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
2004 Feb 18
*7D
*7E
2
Fig.1 Simplified outline (SOT23) and symbol.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD3V3S2UQ | 制造商:NXP Semiconductors 功能描述:DIODE TVS DUAL SOT-663 制造商:NXP Semiconductors 功能描述:DIODE, TVS, DUAL, SOT-663 制造商:NXP Semiconductors 功能描述:DIODE, TVS, DUAL, SOT-663; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:3.3V; Breakdown Voltage Min:5.2V; Breakdown Voltage Max:6V; Clamping Voltage Vc Max:5.6V; Peak Pulse Current Ippm:15A; Diode Case Style:SOT-663; ;RoHS Compliant: Yes |
| PESD3V3S2UQ,115 | 功能描述:TVS二极管阵列 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD3V3S2UT | 制造商:NXP Semiconductors 功能描述:DIODE TVS SOT-23 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOT-23 |
| PESD3V3S2UT,215 | 功能描述:TVS二极管阵列 3.3V DUAL ESD PROTCT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD3V3S2UT215 | 制造商:NXP Semiconductors 功能描述:ESD DIODE 20V Dual Common Anode SOT-2 |
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