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参数资料
| 型号： | PI5101-00-LGIZ |
| 厂商： | Vicor Corporation |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 5V 60A 3LGA |
| 标准包装： | 50 |
| 系列： | Picor®, µRDS(on)FET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 5V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 0.45 毫欧 @ 60A，4.5V |
| Id 时的 Vgs(th)（最大）： | 800 mV @ 1mA |
| 闸电荷(Qg) @ Vgs： | 65nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 7600pF @ 5V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-FLGA |
| 供应商设备封装： | 3-LGA（4.1x8） |
| 包装： | 管件 |
| 其它名称： | 1102-1078-5 |
?
MOSFET Power Dissipation vs. Junction Temperature
150
140
R DS(on) =450 μΩ
R θ JA = 40°C/W
150
R DS(on) =450 μΩ
145 R θ JPCB = 6°C/W
130
120
140
135
130
140°C
130°C
110
100
90
80
70
100°C
90°C
80°C
70°C
125
120
115
110
105
100
120°C
110°C
100°C
60
50
60°C
T A = 50°C
0 5 10
15
20
25
30
35
40
45
50
55
60
95
90
T PCB = 90°C
0 5 10 15 20 25 30 35 40 45 50 55 60
Drain Current [A]
Figure 16: Junction Temperature vs. Drain Current for a
given ambient temperature (0LFM)
In applications such as low loss ORing Diodes or circuit
breakers where the MOSFET is normally on during steady
state operation, the MOSFET power dissipation is derived
from the total Drain current and the on-state resistance of
the MOSFET.
The PI5101 power dissipation can be calculated with the
Drain Current [A]
Figure 17: Junction Temperature vs. Drain Current for a
given PCB temperature
This may require iteration to get to the final junction
temperature. Figure 16 and Figure 17 are added to aid the
user to find the final Junction temperature without the
iterative calculations.
curves versus conducted current at maximum R DS(on) , and
following equation:
at given ambient temperatures at 0LFM air flow.
17 shows the MOSFETs final junction temperature curves
versus conducted current at maximum R DS(on) at given PCB
Where:
: MOSFET power dissipation
: Drain Current
: MOSFET on-state resistance
Note: For the worst case condition, calculate with
maximum rated R DS(on) at the MOSFET maximum operating
junction temperature because R DS(on) is temperature
dependent. Refer to Figure 2 for normalized R DS(on) values
over temperature. The PI5101 maximum R DS(on) at 25°C is
450μΩ and will increase by 24% at 125°C junction
temperature.
The Junction Temperature rise is a function of power
dissipation and thermal resistance.
Where:
: Junction-to-Ambient thermal resistance
(40°C/W)
temperatures.
To find the final junction temperature for a given drain
continuous DC or RMS current and a given ambient or PCB
temperature; draw a vertical line from the drain current
at the X-axis to intersect the ambient or PCB temperature
line. At the intersection draw a horizontal line towards the
Y-axis (Junction Temperature).
Example:
Assume that the MOSFET maximum drain current is 50A
and maximum operating ambient temperature is 70°C.
First use Figure 16 to find the final junction temperature
for 50A load current at 70°C ambient temperature. In
50A to intersect the 70°C ambient temperature line (dark
blue). At the intersection draw a horizontal line towards
the Y-axis (Junction Temperature). The typical junction
temperature with maximum R DS(on) , at load current of 50A
and 70°C ambient is 126°C.
Picor Corporation ? picorpower.com
PI5101-00-LGIZ
Rev 1.0, Jan 25 th 2010
Page 6 of 9
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相关代理商/技术参数 |
参数描述 |
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