参数资料
型号: PIC16C620A-04/P301
元件分类: 微控制器/微处理器
英文描述: 8-BIT, OTPROM, 4 MHz, RISC MICROCONTROLLER, PDIP18
封装: 0.300 INCH, PLASTIC, DIP-18
文件页数: 90/108页
文件大小: 674K
代理商: PIC16C620A-04/P301
PIC16C62X
DS30235G-page 82
Preliminary
1998 Microchip Technology Inc.
12.2
DC CHARACTERISTICS:
PIC16LC62X-04 (Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
–40C
≤ TA ≤ +85C for industrial and
0C
≤ TA ≤ +70C for commercial and
–40C
≤ TA ≤ +125C for extended
Operating voltage VDD range as described in DC spec Table 12-1 and Table 12-2
Param
No.
Sym
Characteristic
Min
Typ Max Units
Conditions
D001
VDD
Supply Voltage
3.0
2.5
-
6.0
V
XT and RC osc conguration
LP osc conguration
D002
VDR
RAM Data Retention
Voltage (Note 1)
1.5*
V
Device in SLEEP mode
D003
VPOR
VDD start voltage to
ensure Power-on Reset
VSS
V
See section on Power-on Reset for
details
D004
SVDD
VDD rise rate to ensure
Power-on Reset
0.05*
V/ms
See section on Power-on Reset for
details
D005
VBOR
Brown-out Detect Voltage
3.7
4.0
4.3
V
BOREN conguration bit is cleared
D010
D010A
IDD
Supply Current (Note 2)
1.4
26
2.5
53
mA
A
XT and RC osc conguration
FOSC = 2.0 MHz, VDD = 3.0V, WDT dis-
abled (Note 4)
LP osc conguration
FOSC = 32 kHz, VDD = 3.0V, WDT dis-
abled
D020
IPD
Power Down Current (Note 3)
0.7
2
A
VDD=3.0V, WDT disabled
D023
IWDT
IBOR
ICOMP
IVREF
WDT Current (Note 5)
Brown-out Reset Current
(Note 5)
Comparator Current for each
Comparator (Note 5)
VREF Current (Note 5)
6.0
350
15
425
100
300
A
VDD=3.0V
BOR enabled, VDD = 5.0V
VDD = 3.0V
*
These parameters are characterized but not tested.
Data in "Typ" column is at 5.0V, 25
°C, unless otherwise stated. These parameters are for design guidance only and are not
tested.
Note 1:
This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2:
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1=external square wave, from rail to rail; all I/O pins tristated, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specied.
3:
The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the
part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD to VSS.
4:
For RC osc conguration, current through Rext is not included. The current through the resistor can be estimated by the
formula Ir = VDD/2Rext (mA) with Rext in k
.
5:
The
current is the additional current consumed when this peripheral is enabled. This current should be added to the
base IDD or IPD measurement.
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