参数资料
型号: PIC16LF818T-I/SS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 10 MHz, RISC MICROCONTROLLER, PDSO20
封装: 0.209 INCH, PLASTIC, MO-150, SSOP-20
文件页数: 99/176页
文件大小: 3124K
代理商: PIC16LF818T-I/SS
2004 Microchip Technology Inc.
DS39598E-page 27
PIC16F818/819
3.3
Reading Data EEPROM Memory
To read a data memory location, the user must write the
address to the EEADR register, clear the EEPGD
control bit (EECON1<7>) and then set control bit, RD
(EECON1<0>). The data is available in the very next
cycle in the EEDATA register; therefore, it can be read
in the next instruction (see Example 3-1). EEDATA will
hold this value until another read or until it is written to
by the user (during a write operation).
The steps to reading the EEPROM data memory are:
1.
Write the address to EEADR. Make sure that the
address is not larger than the memory size of
the device.
2.
Clear the EEPGD bit to point to EEPROM data
memory.
3.
Set the RD bit to start the read operation.
4.
Read the data from the EEDATA register.
EXAMPLE 3-1:
DATA EEPROM READ
3.4
Writing to Data EEPROM Memory
To write an EEPROM data location, the user must first
write the address to the EEADR register and the data
to the EEDATA register. Then, the user must follow a
specific write sequence to initiate the write for each
byte.
The write will not initiate if the write sequence is not
exactly followed (write 55h to EECON2, write AAh to
EECON2, then set WR bit) for each byte. We strongly
recommend that interrupts be disabled during this
code segment (see Example 3-2).
Additionally, the WREN bit in EECON1 must be set to
enable write. This mechanism prevents accidental
writes to data EEPROM due to errant (unexpected)
code execution (i.e., lost programs). The user should
keep the WREN bit clear at all times except when
updating EEPROM. The WREN bit is not cleared
by hardware
After a write sequence has been initiated, clearing the
WREN bit will not affect this write cycle. The WR bit will
be inhibited from being set unless the WREN bit is set.
At the completion of the write cycle, the WR bit is
cleared in hardware and the EE Write Complete
Interrupt Flag bit (EEIF) is set. The user can either
enable this interrupt or poll this bit. EEIF must be
cleared by software.
The steps to write to EEPROM data memory are:
1.
If step 10 is not implemented, check the WR bit
to see if a write is in progress.
2.
Write the address to EEADR. Make sure that the
address is not larger than the memory size of
the device.
3.
Write the 8-bit data value to be programmed in
the EEDATA register.
4.
Clear the EEPGD bit to point to EEPROM data
memory.
5.
Set the WREN bit to enable program operations.
6.
Disable interrupts (if enabled).
7.
Execute the special five instruction sequence:
Write 55h to EECON2 in two steps (first to W,
then to EECON2)
Write AAh to EECON2 in two steps (first to W,
then to EECON2)
Set the WR bit
8.
Enable interrupts (if using interrupts).
9.
Clear the WREN bit to disable program
operations.
10. At the completion of the write cycle, the WR bit
is cleared and the EEIF interrupt flag bit is set
(EEIF must be cleared by firmware). If step 1 is
not implemented, then firmware should check
for EEIF to be set, or WR to be clear, to indicate
the end of the program cycle.
EXAMPLE 3-2:
DATA EEPROM WRITE
BANKSEL EEADR
; Select Bank of EEADR
MOVF
ADDR, W
;
MOVWF
EEADR
; Data Memory Address
; to read
BANKSEL EECON1
; Select Bank of EECON1
BCF
EECON1, EEPGD ; Point to Data memory
BSF
EECON1, RD
; EE Read
BANKSEL EEDATA
; Select Bank of EEDATA
MOVF
EEDATA, W
; W = EEDATA
BANKSEL EECON1
; Select Bank of
; EECON1
BTFSC
EECON1, WR
; Wait for write
GOTO
$-1
; to complete
BANKSEL EEADR
; Select Bank of
; EEADR
MOVF
ADDR, W
;
MOVWF
EEADR
; Data Memory
; Address to write
MOVF
VALUE, W
;
MOVWF
EEDATA
; Data Memory Value
; to write
BANKSEL EECON1
; Select Bank of
; EECON1
BCF
EECON1, EEPGD ; Point to DATA
; memory
BSF
EECON1, WREN
; Enable writes
BCF
INTCON, GIE
; Disable INTs.
MOVLW
55h
;
MOVWF
EECON2
; Write 55h
MOVLW
AAh
;
MOVWF
EECON2
; Write AAh
BSF
EECON1, WR
; Set WR bit to
; begin write
BSF
INTCON, GIE
; Enable INTs.
BCF
EECON1, WREN
; Disable writes
Re
q
u
ir
e
d
S
e
qu
ence
相关PDF资料
PDF描述
PIC16LF877T-20/PT 8-BIT, FLASH, 20 MHz, RISC MICROCONTROLLER, PQFP44
PIC18F242T-I/SO 8-BIT, FLASH, 40 MHz, RISC MICROCONTROLLER, PDSO28
PIC18F442-E/L 8-BIT, FLASH, 40 MHz, RISC MICROCONTROLLER, PQCC44
PIC18F258I/SP 8-BIT, FLASH, 40 MHz, RISC MICROCONTROLLER, PDIP28
PIC18LF448-I/PT 8-BIT, FLASH, 40 MHz, RISC MICROCONTROLLER, PQFP44
相关代理商/技术参数
参数描述
PIC16LF819-I/ML 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16LF819-I/MLTSL 功能描述:8位微控制器 -MCU 3.5 KB FL 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16LF819-I/P 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16LF819-I/PTSL 功能描述:8位微控制器 -MCU 3.5 KB FL 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16LF819-I/SO 功能描述:8位微控制器 -MCU 3.5KB 256 RAM 16 I/O RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT