参数资料
| 型号： | ISL6314IRZ-T |
| 厂商： | Intersil |
| 文件页数： | 19/32页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM 1PHASE BUCK 32-QFN |
| 产品培训模块： | Solutions for Industrial Control Applications |
| 标准包装： | 6,000 |
| 应用： | 控制器，Intel VR11，AMD CPU |
| 输入电压： | 5 V ~ 12 V |
| 输出数： | 1 |
| 输出电压： | 0.38 V ~ 1.6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-VFQFN 裸露焊盘 |
| 供应商设备封装： | 32-QFN 裸露焊盘（5x5） |
| 包装： | 带卷 (TR) |
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ISL6314
C DVC = --------
R DVC = A × R C
C C
A
(EQ. 12)
(EQ. 13)
1.6
1.4
1.2
Advanced Adaptive Zero Shoot-Through Deadtime
Control (Patent Pending)
1.0
0.8
The integrated drivers incorporate a unique adaptive deadtime
control technique to minimize deadtime, resulting in high
efficiency from the reduced freewheeling time of the lower
MOSFET body-diode conduction, and to prevent the upper and
lower MOSFETs from conducting simultaneously. This is
accomplished by ensuring either rising gate turns on its
0.6
0.4
0.2
20nC
Q GATE = 100nC
50nC
MOSFET with minimum and sufficient delay after the other has
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
C BOOT_CAP ≥ --------------------------------------
Δ V BOOT_CAP
Q G1 ? PVCC
Q GATE = ---------------------------------- ? N Q1
turned off.
During turn-off of the lower MOSFET, the PHASE voltage is
monitored until it reaches a -0.3V/+0.8V (forward/reverse
inductor current). At this time the UGATE is released to rise. An
auto-zero comparator is used to correct the r DS(ON) drop in the
phase voltage preventing false detection of the -0.3V phase
level during r DS(ON) conduction period. In the case of zero
current, the UGATE is released after 35ns delay of the LGATE
dropping below 0.5V. When LGATE first begins to transition
low, this quick transition can disturb the PHASE node and
cause a false trip, so there is 20ns of blanking time once
LGATE falls until PHASE is monitored.
Once the PHASE is high, the advanced adaptive
shoot-through circuitry monitors the PHASE and UGATE
voltages during a PWM falling edge and the subsequent
UGATE turn-off. If either the UGATE falls to less than 1.75V
above the PHASE or the PHASE falls to less than +0.8V, the
LGATE is released to turn-on.
Internal Bootstrap Device
The integrated driver features an internal bootstrap schottky
diode. Simply adding an external capacitor across the BOOT
and PHASE pins completes the bootstrap circuit. The
bootstrap function is also designed to prevent the bootstrap
capacitor from overcharging due to the large negative swing
at the PHASE node. This reduces voltage stress on the boot
to phase pins.
19
Δ V BOOT_CAP (V)
FIGURE 9. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
The bootstrap capacitor must have a maximum voltage
rating above PVCC + 4V and its capacitance value can be
chosen from Equation 14: where Q G1 is the amount of gate
charge per upper MOSFET at V GS1 gate-source voltage and
N Q1 is the number of control MOSFETs. The Δ V BOOT_CAP
term is defined as the allowable droop in the rail of the upper
gate drive. Typical curves are shown in Figure 9.
Q GATE
(EQ. 14)
V GS1
Gate Drive Voltage Versatility
The ISL6314 provides the user flexibility in choosing the
gate drive voltage for efficiency optimization. The controller
ties the upper and lower drive rails together. Simply applying
a voltage from 5V up to 12V on PVCC sets both gate drive
rail voltages simultaneously.
Initialization
Prior to initialization, proper conditions must exist on the EN,
VCC, PVCC and the VID pins. When the conditions are met,
the controller begins soft-start. Once the output voltage is
within the proper window of operation, the controller asserts
PGOOD.
FN6455.2
October 8, 2009
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