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| 型号： | PM6670STR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 稳压器 |
| 英文描述： | 3 A SWITCHING CONTROLLER, QCC24 |
| 封装： | 4 X 4 MM, LEAD FREE, VFQFPN-24 |
| 文件页数： | 40/54页 |
| 文件大小： | 742K |
| 代理商： | PM6670STR |
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PM6670S
Application information
Doc ID 14432 Rev 4
45/54
where RDSon is the drain-source on-resistance of the control MOSFET.
Switching losses are approximately given by:
Equation 41
where tON and tOFF are the turn-on and turn-off times of the MOSFET and depend on the
gate-driver current capability and the gate charge Qgate. A greater efficiency is achieved with
low RDSon. Unfortunately low RDSon MOSFETs have a great gate charge.
As general rule, the RDSon x Qgate product should be minimized to find out the suitable
MOSFET.
Logic-level MOSFETs are recommended, as long as low-side and high-side gate drivers are
powered by VVCC = +5 V. The breakdown voltage of the MOSFETs (VBRDSS) must be
greater than the maximum input voltage.VINmax.
lists tested high-side MOSFETs.
In buck converters the power dissipation of the synchronous MOSFET is mainly due to
conduction losses:
Equation 42
Maximum conduction losses occur at the maximum input voltage:
Equation 43
The synchronous rectifier should have the lowest RDSon as possible. When the high-side
MOSFET turns on, high dV/dt of the phase node can bring up even the low-side gate
through its gate-drain capacitance CRRS, causing a cross-conduction problem. Once again,
the choice of the low-side MOSFET is a trade-off between on resistance and gate charge; a
good selection should minimize the ratio CRSS / CGS where
Equation 44
Table 16.
Evaluated high-side MOSFETs
Manufacturer
Type
RDSon
(m
Ω)
Gate charge
(nC)
Rated reverse
voltage (V)
ST
STS12NH3LL
10.5
12
30
IR
IRF7811
9
18
30
2
f
t
)
2
I
(max)
I
(
V
2
f
t
)
2
I
(max)
I
(
V
P
sw
off
L
LOAD
IN
sw
on
L
LOAD
IN
switching
Δ
+
+
Δ
=
conduction
DLowSide
P
2
MAX
,
LOAD
MAX
,
IN
OUT
DSon
conduction
I
V
1
R
P
=
RSS
ISS
GS
C
=
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