参数资料
型号: PMEG6030EP,115
厂商: NXP Semiconductors
文件页数: 10/13页
文件大小: 259K
描述: DIODE SCHOTTKY 60V 3A SOD128
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 60V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 530mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 200µA @ 60V
电容@ Vr, F: 360pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-128
供应商设备封装: SOD-128
包装: 标准包装
其它名称: 568-6530-6
PMEG6030EP_1
? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 21 January 2010 6 of 13
NXP Semiconductors
PMEG6030EP
3 A low VF
MEGA Schottky barrier rectifier
(1) Tj
=
150
°C
(2) Tj
=
125
°C
(3) Tj
=
85
°C
(4) Tj
=
25
°C
(5) Tj
=
?40
°C
(1) Tj
=
125
°C
(2) Tj
=
85
°C
(3) Tj
=
25
°C
(4) Tj
=
?40
°C
Fig 4. Forward current as a function of forward
voltage; typical values
Fig 5. Reverse current as a function of reverse
voltage; typical values
f
=
1
MHz; Tamb
=
25
°C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
006aab881
10?2
10?3
1
10?1
10
IF
(A)
10?4
VF
(V)
0.0 0.70.1 0.2
0.3
0.4
0.5 0.6
(1)
(2)
(3)
(4)
(5)
006aab882
VR
(V)
06020
40
10?1
IR
(A)
10?2
10?3
10?4
10?5
10?6
10?7
10?8
(1)
(2)
(3)
(4)
VR
(V)
06020
40
006aab883
700
Cd
(pF)
0
100
200
300
400
500
600
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