参数资料
型号: PMEG6030EP,115
厂商: NXP Semiconductors
文件页数: 6/13页
文件大小: 259K
描述: DIODE SCHOTTKY 60V 3A SOD128
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 60V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 530mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 200µA @ 60V
电容@ Vr, F: 360pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-128
供应商设备封装: SOD-128
包装: 标准包装
其它名称: 568-6530-6
PMEG6030EP_1
? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 21 January 2010 2 of 13
NXP Semiconductors
PMEG6030EP
3 A low VF
MEGA Schottky barrier rectifier
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin
Description
Simplified outline
Graphic symbol
1
cathode
[1]
2
anode
12
sym001
12
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMEG6030EP
-
plastic surface-mounted package; 2
leads
SOD128
Table 4. Marking codes
Type number
Marking code
PMEG6030EP
AB
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj
=
25
°C
-
60
V
IF(AV)
average forward current
square wave;
δ
=
0.5;
f
=
20
kHz
Tamb
50
°C
[1]
-
3
A
Tsp
135
°C
-
3
A
IFSM
non-repetitive peak
forward current
square wave;
tp
=
8
ms
[2]
-
50
A
Ptot
total power dissipation
Tamb
25
°C
[3][4]
-
625
mW
[3][5]
-
1050
mW
[3][1]
-
2100
mW
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