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参数资料
| 型号： | PWL6030B1AACMR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PBGA187 |
| 封装： | 7 X 7 MM, 0.40 MM PITCH, GREEN, FCBGA-187 |
| 文件页数： | 17/97页 |
| 文件大小： | 937K |
| 代理商： | PWL6030B1AACMR |
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SWCS045B
– SEPTEMBER 2010 – REVISED JUNE 2011
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IIN_LIMIT = 100 mA, VBAT >
84
91
98
VBATMIN_LO
IIN_LIMIT
VBUS input current limiting threshold
mA
IIN_LIMIT = 500 mA, VBAT >
425
460
495
VBATMIN_LO
VBUS
> VINmin or
VREF internal reference voltage
CHRG_AUXPWR
> VBATMIN,
1.65
6.5
V
IVREF = 1 mA, CVREF = 1
F
Voltage from BOOT pin to SW pin
During charge or boost operation
6.5
V
Below VOREG
70
120
160
mV
Deglitch time, VCOUT decreasing
Recharge threshold voltage
below threshold, TF = 100 ns, 10 mV
130
ms
overdrive
BATTERY CHARGER, BATTERY DETECTION
IDETECT battery detection current
Begins after termination detected,
-0.6
–0.45
-0.2
mA
before charge done (sink current)
CHRG_AUXPWR
≤ VOREG
TDETECT battery detection time
215
262
335
ms
BATTERY CHARGER, SLEEP COMPARATOR
VBUS above CHRG_AUXPWR 2.3
CHRG_
CHRG_AUXP
CHRG_AU
VSLP
SLEEP state entry threshold
V
≤ CHRG_AUXPWR ≤ VOREG,
AUXPW
mV
WR+0.0
XPWR+0.1
VBUS falling
R+0.04
VSLP_ EXIT
SLEEP state exit hysteresis
2.3 V
≤ HRG_AUXPWR ≤ VOREG
140
200
260
mV
Deglitch time for VBUS rising above
Rising voltage, 2-mV overdrive, TR =
31
32
34
ms
VSLP + VSLP_EXIT
100 ns
BATTERY CHARGER, PWM
Internal top reverse blocking
180
250
m
Ω
MOSFET on-resistance
Internal top N-channel switching
Measured from PMID to SW
120
250
m
Ω
MOSFET on-resistance
Internal bottom N-channel MOSFET
Measured from SW to PGND
150
200
m
Ω
on-resistance
fOSC
Oscillator frequency
2.7
3
3.3
MHz
DMAX
Maximum duty cycle
99.5
%
DMIN
Minimum duty cycle
0
%
BATTERY CHARGER, BOOST MODE
Boost output voltage (to pin VBUS)
2.5 V
< CHRG_AUXPWR < 4.5 V
5.05
V
VBUS_B
Boost output voltage tolerance
Including line, load regulation
–3
0
3
%
Maximum output current for boost at
VBUS_B = 5.10 V,
IBO1
200
mA
USB connector level
2.5 V
< CHRG_AUXPWR < 4.5 V
Maximum output current for boost at
VBUS_B = 5.10 V,
IBO2
235
mA
PMID connector level
2.5 V
< CHRG_AUXPWR < 4.5 V
IBLIMIT cycle-by-cycle current limit
VBUS_B = 5.10 V,
0.5
1.0
1.5
A
for boost
2.5 V
< CHRG_AUXPWR < 4.5 V
Overvoltage protection threshold for
Threshold over VBUS to turn off
5.8
6.0
6.2
V
boost (VBUS pin)
converter during boost
VBUSOVP
Hysteresis
VBUS falling from above VBUSOVP
90
125
160
mV
CHRG_AUXPWR = 3.6 V, IBO = 200
Efficiency
mA, TA = 25
°C, synchronous
70
85
%
operation
IDDQ
Quiescent current
2.34
2.7
mA
Maximum battery voltage for boost
VCSOUT rising edge during boost
4.75
4.9
5.05
V
(CSOUT pin)
VBATMAX
VCSOUT falling from above
Hysteresis
149
200
260
mV
VBATMAX
24
Copyright
2010–2011, Texas Instruments Incorporated
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