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| 型号： | R0K561664S001BE |
| 厂商： | Renesas Electronics America |
| 文件页数： | 6/50页 |
| 文件大小： | 0K |
| 描述： | KIT STARTER FOR H8SX/1651 |
| 产品培训模块： | H8S Product Overview H8S Architecture Overview Electromagnetic Noise Reduction Techniques Part 1 |
| 标准包装： | 1 |
| 系列： | H8® |
| 类型： | MCU |
| 适用于相关产品： | H8SX/1651 |
| 所含物品： | CPU 板，LCD 显示模块，E10A 仿真器，缆线，快速入门指南和 CD-ROM |
| 相关产品： | R5F61668RN50FPV-ND - IC H8SX/1668 MCU FLASH 144LQFP R5F61664RN50FPV-ND - IC H8SX/1664 MCU FLASH 144LQFP DF61664W50FPV-ND - IC H8SX/1664 MCU FLASH 144-LQFP DF61663W50FPV-ND - IC H8SX/1663 MCU FLASH 144-LQFP DF61664N50FPV-ND - MCU 3V 512K 144-LQFP DF61663N50FPV-ND - IC H8SX/1663 MCU FLASH 144LQFP |
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H8 Family of Microcontrollers
?
Renesas is the #1 Flash MCU Supplier
4
? Renesas, the world ’ s
Flash Memory Roadmap
#1 supplier of flash,
Memory Str u ct u re
2004
2005
2006
2007
2008
2009 2010 2011
2012 2013 2014
has shipped over
1 billion flash MCUs
Next-Generation Non-volatile Memory
- MRAM
- PRAM (Phase Change RAM)
New
NVM
MRAM
133MHz
New
NVM
(65nm)
166MHz
(45nm)
? Wide ran g e of sizes
of hi g hly reliable
F-ZTAT (flash) up
to 1MB, in 0.18μm
process
MONOS-type FLASH
(MONOS = Metal Oxide
Nitride Oxide Silicon)
MONOS
MONOS 50 MHz (180nm)
MONOS 100MHz
80MHz
100MHz (150nm)
NOR 80MHz (130nm)
(90nm)
All Fla s h memory acce ss e s are
s ingle cycle, eliminating the
need for pre-fetch operation s .
? Fastest flash write
time: 2.5 sec./ 128KB
Stacked-type
(NOR) Flash HND
NOR 80MHz
NOR
(200 - 180nm)
80MHz
(150nm)
for 0.18μm process
? Access as fast as
10ns @ 100MHz
? Up to -40°C to +125°C ran g e
? Multiple user-friendly
modes for pro g rammin g /
repro g rammin g flash memory
Powerful Data Path
? User mode allows flash to be
pro g rammed or erased by user
application software
? Boot mode allows in-system
pro g rammin g usin g RS-232
serial port
? USB devices can be optionally
pro g rammed via the USB port
? User Boot mode allows storin g
a custom flash update routine
in a special protected area
? Write mode enables MCU
pro g rammin g with desktop
or production pro g rammers
? Flash can be pro g rammed via
the on-chip debu g emulator
Management
H8 products are fully optimized system
solutions, so besides powerful C P U core
Fla s h
ROM
H8S CPU
“A” Transfers
RAM
Internal Bus
DTC
processin g , H8 MCUs have advanced
data path mana g ement.
INTC
Bu s Bridge
DMA
(4ch)
BSC
“B” Transfers
There are three types of data movement
en g ines: System D MA, External D MA
Peripheral Bus
EXDMA
and D ata Transfer Controller. The
Advanced Bus System Controller
I/O Port s
Serial Transfers using DMA only
(Full Speed)
mana g es complex data and control
A1
B1
A2
B2
A3
Parallel operation made possible
across the multiple-bus architecture.
The H8S and H8SX MCU architectures
use 3 separate buses. D ata movement on
A1 A2 A3
Time Saved
B1 B2
Parallel Transfers using DMA + EXDMA
by using DMA + EXDMA allows
more data transfers in a given
length of time for increased
system throughput
the External Bus and System Bus can
operate in parallel, g reatly increasin g
system performance by optimizin g
operation per clock cycle.
This example shows system operation (red) using the
System DMA, while in parallel the External DMA is
transferring data between an external device and the MCU
(yellow). This parallel operation reduces time for operation.
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