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参数资料
| 型号： | R1LV0416DBG-7LI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 4M SRAM (256-kword 】 16-bit) |
| 中文描述： | 4分的SRAM（256 - KWord的】16位） |
| 文件页数： | 14/17页 |
| 文件大小： | 168K |
| 代理商： | R1LV0416DBG-7LI |
R1LV0416D Series
Low V
CC
Data Retention Characteristics
(Ta = -40 to +85°C)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
V
CC
for data retention
V
DR
2.0
V
Vin
≥
0V
(1) 0 V
≤
CS2
≤
0.2 V or
(2) CS2
≥
V
CC
0.2 V,
CS1#
≥
V
0.2 V or
(3) LB# = UB#
≥
V
0.2 V,
CS2
≥
V
0.2 V,
CS1#
≤
0.2 V
V
= 3.0 V, Vin
≥
0V
(1) 0 V
≤
CS2
≤
0.2 V or
(2) CS2
≥
V
CC
0.2 V,
CS1#
≥
V
0.2 V or
(3) LB# = UB#
≥
V
0.2 V,
CS2
≥
V
0.2 V,
CS1#
≤
0.2 V
Average values
to +85
°
C
to +70
°
C
to +40
°
C
to +25
°
C
to +85
°
C
to +70
°
C
to +40
°
C
to +25
°
C
I
CCDR
I
CCDR
I
CCDR
I
CCDR
I
CCDR
I
CCDR
I
CCDR
I
CCDR
t
CDR
t
R
0
1
*
1
*
10
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
ns
8
3
5SI
1
2.5
20
16
10
Data
retention
current
7LI
1
10
Chip deselect to data retention time
Operation recovery time
Note: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and specified loading, and not guaranteed.
5
ms
See retention waveform
Rev.1.00, May.24.2007, page 14 of 15
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV0416DSB-5SI | 4M SRAM (256-kword 】 16-bit) |
| R1LV0416DSB-7LI | 4M SRAM (256-kword 】 16-bit) |
| R1LV1616H-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4LI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV0416DBG-7LI#B0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA 制造商:Renesas Electronics Corporation 功能描述:4MB ADV.SRAM, I-TEMP, CSP, TRAY, PB-FREE - Trays 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 4MBIT 70NS 48FBGA 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA |
| R1LV0416DBG-7LI#S0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA 制造商:Renesas Electronics Corporation 功能描述:4MB ADV. SRAM, I-TEMP, CSP, T/R, PB-FREE - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:RENR1LV0416DBG-7LI#S0 4MBIT LP SRAM (256 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 4MBIT 70NS 48FBGA |
| R1LV0416DSB-5LI#S0 | 制造商:Renesas Electronics Corporation 功能描述:4MG, 256KX16, IND TEMP - Trays |
| R1LV0416DSB-5SC | 制造商:Renesas Electronics Corporation 功能描述:SRAM 4MBIT 3V 55NS 44TSOP |
| R1LV0416DSB-5SI | 制造商:Renesas Electronics Corporation 功能描述:Memory,SRAM,LowPower,4Mb,256kx16,TSOP44 |
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