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参数资料
| 型号： | R1LV0416DBG-7LI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 4M SRAM (256-kword 】 16-bit) |
| 中文描述： | 4分的SRAM（256 - KWord的】16位） |
| 文件页数： | 5/17页 |
| 文件大小： | 168K |
| 代理商： | R1LV0416DBG-7LI |
R1LV0416D Series
Operation Table
CS1#
CS2
×
L
×
H
WE#
×
×
×
H
OE#
×
×
×
L
UB#
×
×
H
L
H
LB#
×
×
H
L
L
I/O0 to I/O7
I/O8 to I/O15
Operation
H
×
×
L
High-Z
High-Z
Standby
High-Z
High-Z
Standby
High-Z
High-Z
Standby
Dout
Dout
Read
L
H
H
L
Dout
High-Z
Lower byte read
L
H
H
L
×
×
×
H
L
H
High-Z
Dout
Upper byte read
L
H
L
L
L
Din
Din
Write
L
H
L
H
L
Din
High-Z
Lower byte write
L
H
L
L
×
H
×
High-Z
Din
Upper byte write
L
H
H
High-Z
High-Z
Output disable
Note: H: V
IH
, L: V
IL
,
×
: V
IH
or V
IL
Absolute Maximum Ratings
Parameter
Symbol
Value
0.5 to +4.6
0.5
*
Unit
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
V
1
to V
CC
+ 0.3
*
0.7
40 to +85
65 to +150
40 to +85
2
V
W
°
C
°
C
°
C
Operating temperature1
Storage temperature range
Tstg
Storage temperature range under bias
Tbias
Notes: 1. V
T
min:
3.0 V for pulse half-width
≤
30 ns.
2. Maximum voltage is +4.6 V.
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Note
V
CC
V
SS
V
IH
V
IL
Ta
2.7
3.0
3.6
V
Supply voltage
0
0
0
V
Input high voltage
2.2
0.3
40
V
CC
+ 0.3
0.6
V
Input low voltage
V
°
C
1
Ambient temperature range
Note: 1. V
IL
min:
3.0 V for pulse half-width
≤
30 ns.
+85
Rev.1.00, May.24.2007, page 5 of 15
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV0416DSB-5SI | 4M SRAM (256-kword 】 16-bit) |
| R1LV0416DSB-7LI | 4M SRAM (256-kword 】 16-bit) |
| R1LV1616H-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4LI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV0416DBG-7LI#B0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA 制造商:Renesas Electronics Corporation 功能描述:4MB ADV.SRAM, I-TEMP, CSP, TRAY, PB-FREE - Trays 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 4MBIT 70NS 48FBGA 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA |
| R1LV0416DBG-7LI#S0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA 制造商:Renesas Electronics Corporation 功能描述:4MB ADV. SRAM, I-TEMP, CSP, T/R, PB-FREE - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:RENR1LV0416DBG-7LI#S0 4MBIT LP SRAM (256 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 4MBIT 70NS 48FBGA |
| R1LV0416DSB-5LI#S0 | 制造商:Renesas Electronics Corporation 功能描述:4MG, 256KX16, IND TEMP - Trays |
| R1LV0416DSB-5SC | 制造商:Renesas Electronics Corporation 功能描述:SRAM 4MBIT 3V 55NS 44TSOP |
| R1LV0416DSB-5SI | 制造商:Renesas Electronics Corporation 功能描述:Memory,SRAM,LowPower,4Mb,256kx16,TSOP44 |
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