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参数资料
| 型号： | R1LV0416DBG-7LI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 4M SRAM (256-kword 】 16-bit) |
| 中文描述： | 4分的SRAM（256 - KWord的】16位） |
| 文件页数： | 9/17页 |
| 文件大小： | 168K |
| 代理商： | R1LV0416DBG-7LI |
R1LV0416D Series
Write Cycle
R1LV0416D
-5SI
-7LI
Parameter
Symbol
Min
Max
20
Min
Max
25
Unit
Notes
Write cycle time
t
WC
t
AW
t
CW
t
WP
t
BW
t
AS
t
WR
t
DW
t
DH
t
OW
t
OHZ
t
WHZ
55
70
ns
Address valid to end of write
50
60
ns
Chip selection to end of write
50
60
ns
5
Write pulse width
40
50
ns
4
LB#, UB# valid to end of write
50
55
ns
Address setup time
0
0
ns
6
Write recovery time
0
0
ns
7
Data to write time overlap
25
30
ns
Data hold from write time
0
0
ns
Output active from end of write
5
5
ns
2
Output disable to output in high-Z
0
0
ns
1, 2, 3
Write to output in high-Z
Notes: 1. t
, t
, t
and t
are defined as the time at which the outputs achieve the open circuit conditions and are not
referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t
HZ
max is less than t
LZ
min both for a given device and from
device to device.
4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#. A write
begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB# going low or UB#
going low. A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and
LB# going high or UB# going high. t
WP
is measured from the beginning of write to the end of write.
5. t
CW
is measured from the later of CS1# going low or CS2 going high to the end of write.
6. t
AS
is measured from the address valid to the beginning of write.
7. t
WR
is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle.
0
20
0
25
ns
1, 2
Rev.1.00, May.24.2007, page 9 of 15
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV0416DSB-5SI | 4M SRAM (256-kword 】 16-bit) |
| R1LV0416DSB-7LI | 4M SRAM (256-kword 】 16-bit) |
| R1LV1616H-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4LI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV0416DBG-7LI#B0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA 制造商:Renesas Electronics Corporation 功能描述:4MB ADV.SRAM, I-TEMP, CSP, TRAY, PB-FREE - Trays 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 4MBIT 70NS 48FBGA 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA |
| R1LV0416DBG-7LI#S0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA 制造商:Renesas Electronics Corporation 功能描述:4MB ADV. SRAM, I-TEMP, CSP, T/R, PB-FREE - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:RENR1LV0416DBG-7LI#S0 4MBIT LP SRAM (256 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 4MBIT 70NS 48FBGA |
| R1LV0416DSB-5LI#S0 | 制造商:Renesas Electronics Corporation 功能描述:4MG, 256KX16, IND TEMP - Trays |
| R1LV0416DSB-5SC | 制造商:Renesas Electronics Corporation 功能描述:SRAM 4MBIT 3V 55NS 44TSOP |
| R1LV0416DSB-5SI | 制造商:Renesas Electronics Corporation 功能描述:Memory,SRAM,LowPower,4Mb,256kx16,TSOP44 |
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