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参数资料
| 型号： | R1LV0416DBG-7LI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 4M SRAM (256-kword 】 16-bit) |
| 中文描述： | 4分的SRAM（256 - KWord的】16位） |
| 文件页数： | 6/17页 |
| 文件大小： | 168K |
| 代理商： | R1LV0416DBG-7LI |
R1LV0416D Series
DC Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
μ
A Vin = V
SS
to V
CC
μ
A CS1# = V
or CS2 = V
IL
or
OE# = V
or WE# = V
IL
or
LB# = UB# = V
IH
,
V
I/O
= V
SS
to V
CC
mA CS1# = V
IL
, CS2 = V
,
Others = V
IH
/V
IL
, I
I/O
= 0 mA
mA Min. cycle, duty = 100%,
I
= 0 mA, CS1# = V
IL
,
CS2 = V
,
Others = V
IH
/V
IL
mA Cycle time = 1
μ
s,
duty = 100%,
I
= 0 mA, CS1#
≤
0.2 V,
CS2
≥
V
CC
0.2 V
V
IH
≥
V
CC
0.2 V, V
IL
≤
0.2 V
mA CS2 = V
IL
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
V
I
OH
=
1 mA
V
I
OH
=
100
μ
A
V
I
OL
= 2 mA
V
I
OL
= 100
μ
A
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
1
Output leakage current
1
Operating current
I
CC
20
I
CC1
25
Average operating current
I
CC2
5
Standby current
I
SB
I
SB1
I
SB1
I
SB1
I
SB1
I
SB1
I
SB1
I
SB1
I
SB1
V
OH
V
OH2
V
OL
V
OL2
2.4
0.1
*
1
*
1
*
—
—
—
—
1
0.3
to +85
°
C
to +70
°
C
to +40
°
C
to +25
°
C
to +85
°
C
to +70
°
C
to +40
°
C
to +25
°
C
10
8
3
5SI
1
2.5
20
16
10
Standby current
7LI
1
10
—
—
0.4
Vin
≥
0 V
(1) 0 V
≤
CS2
≤
0.2 V or
(2) CS1#
≥
V
CC
0.2 V,
CS2
≥
V
CC
0.2 V or
(3) LB# = UB#
≥
V
CC
0.2 V,
CS2
≥
V
CC
0.2 V,
CS1#
≤
0.2 V
Average values
Output high voltage
V
CC
0.2
—
—
Output low voltage
0.2
Note: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and specified loading, and not guaranteed.
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
8
pF
Vin = 0 V
1
Input/output capacitance
Note: 1. This parameter is sampled and not 100% tested.
C
I/O
10
pF
V
I/O
= 0 V
1
Rev.1.00, May.24.2007, page 6 of 15
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PDF描述 |
|---|---|
| R1LV0416DSB-5SI | 4M SRAM (256-kword 】 16-bit) |
| R1LV0416DSB-7LI | 4M SRAM (256-kword 】 16-bit) |
| R1LV1616H-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4LI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV0416DBG-7LI#B0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA 制造商:Renesas Electronics Corporation 功能描述:4MB ADV.SRAM, I-TEMP, CSP, TRAY, PB-FREE - Trays 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 4MBIT 70NS 48FBGA 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA |
| R1LV0416DBG-7LI#S0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin TFBGA 制造商:Renesas Electronics Corporation 功能描述:4MB ADV. SRAM, I-TEMP, CSP, T/R, PB-FREE - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:RENR1LV0416DBG-7LI#S0 4MBIT LP SRAM (256 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 4MBIT 70NS 48FBGA |
| R1LV0416DSB-5LI#S0 | 制造商:Renesas Electronics Corporation 功能描述:4MG, 256KX16, IND TEMP - Trays |
| R1LV0416DSB-5SC | 制造商:Renesas Electronics Corporation 功能描述:SRAM 4MBIT 3V 55NS 44TSOP |
| R1LV0416DSB-5SI | 制造商:Renesas Electronics Corporation 功能描述:Memory,SRAM,LowPower,4Mb,256kx16,TSOP44 |
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