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参数资料
| 型号： | RFD16N05LSM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 16A TO-252AA |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Product Discontinuation 14/Mar/2011 |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 47 毫欧 @ 16A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250mA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 功率 - 最大： | 60W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 管件 |
RFD16N05LSM
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
RFD16N05LSM9A
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DS
Drain to Gate Voltage (R GS = 20k ? ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Derate Above 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
50
50
16
45
± 10
60
0.48
-55 to 150
300
260
V
V
A
A
V
W
W/ o C
o C
o C
o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T J = 25 o C to 125 o C.
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
SYMBOL
BV DSS
V GS(TH)
I DSS
I GSS
r DS(ON)
t (ON)
t d(ON)
t r
t d(OFF)
t f
t (OFF)
TEST CONDITIONS
I D = 250mA, V GS = 0V, Figure 10
V GS = V DS , I D = 250mA, Figure 9
V DS = 40V, V GS = 0V
T C = 150 o C
V GS = ± 10V, V DS = 0V
I D = 16A, V GS = 5V
I D = 16A, V GS = 4V
V DD = 25V, I D = 8A,
V GS = 5V, R GS = 12.5 ?
Figures 15, 16
MIN
50
1
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
14
30
42
14
-
MAX
-
2
1
50
100
0.047
0.056
60
-
-
-
-
100
UNITS
V
V
μ A
μ A
nA
?
?
ns
ns
ns
ns
ns
ns
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Q g(TOT)
Q g(5)
Q g(TH)
R θ JC
R θ JA
V GS = 0V to 10V
V GS = 0V to 5V
V GS = 0V to 1V
V DD = 40V,
I D = 16A,
R L = 2.5 ?
Figures 17, 18
-
-
-
-
-
-
-
-
-
-
80
45
3
2.083
100
nC
nC
nC
o C/W
o C/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Diode Reverse Recovery Time
SYMBOL
V SD
t rr
TEST CONDITIONS
I SD = 16A
I SD = 16A, dI SD /dt = 100A/ μ s
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.
?2003 Fairchild Semiconductor Corporation
RFD16N05LSM Rev. C1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RFD16N05LSM | 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK |
| RFD16N05LSM_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD16N05LSM_Q | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFD16N05LSM9A | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFD16N05NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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