参数资料
型号: RFD16N06LESM9A
厂商: Fairchild Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH 60V 16A DPAK
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: DPAK, TO-252(AA)
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 16A
开态Rds(最大)@ Id, Vgs @ 25° C: 47 毫欧 @ 16A,5V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 62nC @ 10V
输入电容 (Ciss) @ Vds: 1350pF @ 25V
功率 - 最大: 90W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 标准包装
产品目录页面: 1606 (CN2011-ZH PDF)
其它名称: RFD16N06LESM9ADKR
RFD16N06LESM
Data Sheet
N-Channel Logic Level Power MOSFET
60 V, 16 A, 47 m?
These are N-Channel power MOSFETs manufactured
using a modern process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. This performance is accomplished through a
special gate oxide design which provides full rated
conductance at gate bias in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA49027.
Ordering Information
October 20 13
Features
? 16A, 60V
? r DS(ON) = 0.047 ?
? Temperature Compensating PSPICE ? Model
? Can be Driven Directly from CMOS, NMOS, TTL
Circuits
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
PART NUMBER
RFD16N06LESM 9A
PACKAGE
TO-252AA
BRAND
16N06LE
D
G
S
Packaging
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
?2002 Fairchild Semiconductor Corporation
RFD16N06LESM Rev. C0
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