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参数资料
| 型号： | RFP12N10L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 12A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 400 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 12A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 900pF @ 25V |
| 功率 - 最大： | 60W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
RFP12N10L
Data Sheet
N-Channel Logic Level Power MOSFET
100 V, 12 A, 200 m?
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
October 20 13
Features
? 12A, 100V
? r DS(ON) = 0.200 ?
? Design Optimized for 5V Gate Drives
programmable controllers,
automotive
switching
and
? Can be Driven Directly from QMOS, NMOS,
solenoid drivers. This performance is accomplished
through a special gate oxide design which provides full
rated conduction at gate biases in the 3V to 5V range,
thereby facilitating true on-off power control directly from
logic circuit supply voltages.
Formerly developmental type TA09526.
Ordering Information
TTL Circuits
? Compatible with Automotive Drive Requirements
? SOA is Power-Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
PART NUMBER
RFP12N10L
PACKAGE
TO-220AB
BRAND
F12N10L
? Majority Carrier Device
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
?2005 Fairchild Semiconductor Corporation
DRAIN
(TAB)
DRAIN
GATE
RFP12N10L Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RFP12N10L | 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220 |
| RFP12N10L_Q | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFP12N10LR4154 (6 AMPS) | 制造商:Intersil Corporation 功能描述: |
| RFP12N18 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP12N20 | 制造商:Harris Corporation 功能描述: |
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