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参数资料
| 型号： | RFP12N10L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 12A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 400 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 12A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 900pF @ 25V |
| 功率 - 最大： | 60W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
RFP12N10L
Typical Performance Curves
Unless Otherwise Specified
1.2
1.0
100
OPERATION IN THIS
REGION IS LIMITED
BY r DS(ON)
T C = 25 o C
TJ = MAX RATED
I D (MAX) CONTINUOUS
0.8
10
DC OPERATION
0.6
0.4
0.2
1
60W
0
0
50 100
T C , CASE TEMPERATURE ( o C)
150
0.1
1
10 100
V DS , DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. FORWARD BIAS OPERATING AREA
40
30
PULSE DURATION = 80 μ s
DUTY CYCLE ≤ 0.5%
T C = 25 o C
V G S
= 10
V
20
15
V DS = 10V
PULSE DURATION = 80 μ s
DUTY CYCLE ≤ 0.5%
-40 o C
20
5V
4V
10
25 o C
125 o C
10
3V
5
0
0
2V
1 2 3 4
5
0
0
125 o C
1
2
-40 o C
3
4
5
0.3
V DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. SATURATION CHARACTERISTICS
125 o C
2.0
1.5
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 4. TRANSFER CHARACTERISTICS
V GS = 5V, I D = 12A
PULSE DURATION = 80 μ s
DUTY CYCLE ≤ 0.5%
0.2
25 o C
-40 o C
1.0
0.1
0.5
V GS = 5V
PULSE DURATION = 80 μ s
DUTY CYCLE ≤ 0.5%
0
0
5
10 15 20
25
30
0
-50
0 50 100
150
I D, DRAIN CURRENT (A)
FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
?2005 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
RFP12N10L Rev. C0
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