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参数资料
| 型号： | RFP12N10L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 12A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 400 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 12A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 900pF @ 25V |
| 功率 - 最大： | 60W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
RFP12N10L
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
RFP12N10L
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V DS
Drain to Gate Voltage (R GS = 1M ?) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Above T C = 25 o C, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J, T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
100
100
12
30
±10
60
0.48
-55 to 150
300
260
V
V
A
A
V
W
W/ o C
o C
o C
o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T J = 25 o C to 125 o C.
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
SYMBOL
BV DSS
V GS(TH)
TEST CONDITIONS
I D = 250 μ A, V GS = 0V
V GS = V DS , I D = 250 μ A (Figure 7)
V DS = 80V
MIN
100
1
-
TYP
-
-
-
MAX
-
2
1
UNITS
V
V
μ A
Zero Gate Voltage Drain Current
I DSS
V GS = 0V
T C = 125 o C
-
-
50
μ A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Input Capacitance
I GSS
r DS(ON)
C ISS
V GS = 10V, V DS = 0V
I D = 12A, V GS = 5V (Figures 5, 6)
V GS = 0V, V DS = 25V, f = 1MHz
-
-
-
-
-
-
100
0.200
900
nA
?
pF
(Figure 8)
Output Capacitance
Reverse-Transfer Capacitance
C OSS
C RSS
-
-
-
-
325
170
pF
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance Junction to Case
t d(ON)
t r
t d(OFF)
t f
R θ JC
I D = 6A, V DD = 50V, R G = 6.25 ? ,
V GS = 5V
(Figures 9, 10, 11)
TO-220
-
-
-
-
15
70
100
80
50
150
130
150
2.083
ns
ns
ns
ns
oC/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
SYMBOL
V SD
t rr
TEST CONDITIONS
I SD = 6A
I SD = 4A, dI SD /dt = 50A/ μ s
MIN
-
-
TYP
-
150
MAX
1.4
-
UNITS
V
ns
NOTES:
2. Pulsed: pulse duration = 80 μ s max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
?2005 Fairchild Semiconductor Corporation
RFP12N10L Rev. C0
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