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参数资料
| 型号： | RHP020N06T100 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 2A SOT-89 |
| 产品目录绘图： | xT100 Series SOT-89 |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 140pF @ 10V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-243AA |
| 供应商设备封装： | MPT3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1637 (CN2011-ZH PDF) |
| 其它名称： | RHP020N06T100DKR |
RHP020N06
Electrical characteristics curves
Data Sheet
V GS = 10V
10
8
6
4
V GS = 10V
V GS = 5.0V
V GS = 4.5V
V GS = 3.5V V GS = 4.0V
V GS = 2.8V
Ta=25°C
Pulsed
10
8
6
4
Ta=25°C
V GS = 5.0V Pulsed
V GS = 4.5V
V GS = 4.0V
10
1
0.1
V DS = 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
V GS = 2.4V
2
2
V GS = 3.0V
0.01
V GS = 2.4V
0
0
0.001
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
0
1
2
3
4
DRAIN-SOURCE VOLTAGE : V DS [V]
Fig.1 Typical Output Characteristics( Ⅰ )
DRAIN-SOURCE VOLTAGE : V DS [V]
Fig.2 Typical Output Characteristics( Ⅱ )
GATE-SOURCE VOLTAGE : V GS [V]
Fig.3 Typical Transfer Characteristics
10
1
Ta= 25°C
Pulsed
V GS = 4.0V
V GS = 4.5V
V GS = 10V
10
1
V GS = 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
1
V GS = 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
0.01
0.1
0.01
0
0
0.01
0.1
1
10
0.01
0.1
1
10
0.01
0.1
1
10
10
DRAIN-CURRENT : I D [A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ )
10
DRAIN-CURRENT : I D [A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ )
DRAIN-CURRENT : I D [A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ )
10
1
V GS = 4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V DS = 10V
Pulsed
1
V GS =0V
Pulsed
1
Ta= -25°C
0.1
Ta=25°C
Ta=75°C
Ta=125°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
0.01
0.01
0.1
1
10
0.01
0.1
1
10
0
0.5
1
1.5
DRAIN-CURRENT : I D [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ )
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
DRAIN-CURRENT : I D [A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
3/4
SOURCE-DRAIN VOLTAGE : V SD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2009.03 - Rev.A
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