参数资料
型号: RHP020N06T100
厂商: Rohm Semiconductor
文件页数: 5/5页
文件大小: 0K
描述: MOSFET N-CH 60V 2A SOT-89
产品目录绘图: xT100 Series SOT-89
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 200 毫欧 @ 2A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 14nC @ 10V
输入电容 (Ciss) @ Vds: 140pF @ 10V
功率 - 最大: 500mW
安装类型: 表面贴装
封装/外壳: TO-243AA
供应商设备封装: MPT3
包装: 标准包装
产品目录页面: 1637 (CN2011-ZH PDF)
其它名称: RHP020N06T100DKR
Appendix
Notes
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wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
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sponsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
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sponsibility whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment
or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-
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