参数资料
型号: RRR030P03TL
厂商: Rohm Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET P-CH 30V 3A TSMT3
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 3A
开态Rds(最大)@ Id, Vgs @ 25° C: 75 毫欧 @ 3A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 5.2nC @ 5V
输入电容 (Ciss) @ Vds: 480pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: SC-96
供应商设备封装: TSMT3
包装: 标准包装
其它名称: RRR030P03TLDKR
RRR030P03
Electrical characteristic curves
Data Sheet
3
2.5
2
1.5
-10V
-4.5V
-3.8V
-3.2V
Ta=25°C
Pulsed
3
2.5
2
1.5
-3.2V
-3.0V
-10V
-4.5V
-3.6V
Ta=25°C
Pulsed
10
1
0.1
V DS = -10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
0.5
-2.8V
-3.0V
V GS =-2.5V
1
0.5
V GS = -2.8V
0.01
0
0
0.001
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
0
1
2
3
4
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.1 Typical output characteristics( Ⅰ )
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.2 Typical output characteristics( Ⅱ )
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.3 Typical Transfer Characteristics
1000
Ta=25°C
1000
V GS = -10V
1000
V GS = -4.5V
Pulsed
V GS = -4.0V
V GS = -4.5V
V GS = -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
100
100
10
0.1
1
10
10
0.1
1
10
10
0.1
1
10
DRAIN-CURRENT : -I D [A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ )
DRAIN-CURRENT : -I D [A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ )
DRAIN-CURRENT : -I D [A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ )
1000
V GS = -4.0V
Pulsed
Ta=125°C
Ta=75°C
10
V DS = -10V
Pulsed
10
V GS =0V
Pulsed
Ta=25°C
Ta= -25°C
1
Ta=125°C
Ta=75°C
100
1
Ta= -25°C
Ta=25°C
Ta=25°C
Ta=-25°C
Ta=75°C
Ta=125°C
0.1
10
0.1
0.01
0.1
1
10
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
DRAIN-CURRENT : -I D [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ )
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c 2009 ROHM Co., Ltd. All rights reserved.
DRAIN-CURRENT : -I D [A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
3/4
SOURCE-DRAIN VOLTAGE : -V SD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2009.04 - Rev.A
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