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参数资料
| 型号： | RRR040P03TL |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 4A TSMT3 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 10.5nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1000pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | TSMT3 |
| 包装： | 带卷 (TR) |
RRR040P03
? Electrical characteristics curves
Data Sheet
4
3
2
V GS = -10V
V GS = -4.5V
V GS = -4.0V
V GS = -2.8V
Ta=25°C
Pulsed
4
3
2
Ta=25°C
V GS = -2.8V Pulsed
V GS = -10V
V GS = -4.5V
V GS =-4.0V
V GS =-3.0V
100
10
1
0.1
V DS = -10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
0
V GS = -2.5V
1
0
V GS = -2.5V
0.01
0.001
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
0
1
2
3
4
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.1 Typical Output Characteristics( Ⅰ )
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.2 Typical Output Characteristics( Ⅱ )
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.3 Typical Transfer Characteristics
1000
100
Ta=25°C
Pulsed
V GS = -4.0V
V GS = -4.5V
V GS = -10V
1000
100
V GS = -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
100
V GS = -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
10
10
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN-CURRENT : -I D [A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ )
DRAIN-CURRENT : -I D [A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ )
DRAIN-CURRENT : -I D [A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ )
1000
V GS = -4.0V
Pulsed
Ta=125°C
10
V DS = -10V
Pulsed
10
V GS =0V
Pulsed
Ta=75°C
Ta=25°C
1
100
Ta= -25°C
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
0.1
0.01
0.1
1
10
0.01
0.1
1
10
0
0.5
1
1.5
DRAIN-CURRENT : -I D [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ )
www.rohm.com
?20 10 ROHM Co., Ltd. All rights reserved.
DRAIN-CURRENT : -I D [A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
3/5
SOURCE-DRAIN VOLTAGE : -V SD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2010.04 - Rev.A
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