参数资料
型号: RRR040P03TL
厂商: Rohm Semiconductor
文件页数: 4/6页
文件大小: 0K
描述: MOSFET P-CH 30V 4A TSMT3
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4A
开态Rds(最大)@ Id, Vgs @ 25° C: 45 毫欧 @ 4A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 10.5nC @ 5V
输入电容 (Ciss) @ Vds: 1000pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: TSMT3
包装: 带卷 (TR)
RRR040P03
Data Sheet
150
100
Ta=25°C
Pulsed
I D = -2.0A
I D = -4.0A
10000
1000
t d(off)
t f
Ta=25°C
V DD = -15V
V GS = -10V
R G =10 ?
Pulsed
8
6
100
t d(on)
4
Ta=25°C
50
0
10
1
t r
2
0
V DD = -15V
I D = -4.0A
R G =10 ?
Pulsed
0
5
10
15
0.01
0.1
1
10
0
5
10
15
10000
1000
100
10
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Ta=25°C
Ciss
f=1MHz
V GS =0V
Crss
Coss
DRAIN-CURRENT : -I D [A]
Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
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4/5
2010.04 - Rev.A
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