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参数资料
| 型号： | RZM002P02T2L |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 0.2A UMT6 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 1.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 115pF @ 10V |
| 功率 - 最大： | 150mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | UMT6 |
| 包装： | 标准包装 |
| 其它名称： | RZM002P02T2LDKR |
RZM002P02
Electrical characteristic curves
Data Sheet
0.2
V GS = -10.0V
Ta=25°C
Pulsed
0.2
V GS = -4.5V
Ta=25°C
Pulsed
1 V DS = -10V
Pulsed
0.15
V GS = -4.5V
V GS = -3.2V
V GS = -2.5V
0.15
V GS = -2.5V
V GS = -1.8V
V GS = -1.5V
0.1
Ta= 125°C
0.1
V GS = -1.5V
V GS = -2.0V
V GS = -1.8V
0.1
V GS = -1.2V
0.01
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.05
0
V GS = -1.2V
V GS = -1.0V
0.05
0
V GS = -1.0V
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
0
0.5
1
1.5
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.1 Typical output characteristics( Ⅰ )
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.2 Typical output characteristics( Ⅱ )
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.3 Typical Transfer Characteristics
10000
Ta=25°C
Pulsed
10000
V GS = -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
V GS = -2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
100
V GS = -1.2V
V GS = -1.5V
V GS = -1.8V
V GS = -2.5V
V GS = -4.5V
1000
100
1000
100
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0.001
0.01
0.1
1
DRAIN-CURRENT : -I D [A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ )
DRAIN-CURRENT : -I D [A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ )
DRAIN-CURRENT : -I D [A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ )
10000
V GS = -1.8V
Pulsed
Ta=125°C
Ta=75°C
10000
V GS = -1.5V
Pulsed
10000
V GS = -1.2V
Pulsed
Ta=25°C
Ta= -25°C
Ta=125°C
1000
1000
Ta=125°C
Ta=75°C
1000
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=25°C
Ta= -25°C
100
100
100
0.001
0.01
0.1
1
0.001
0.01
0.1
0.001
0.01
0.1
DRAIN-CURRENT : -I D [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ )
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
DRAIN-CURRENT : -I D [A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ )
3/4
DRAIN-CURRENT : -I D [A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅵ )
2009.06 - Rev.B
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