参数资料
型号: RZM002P02T2L
厂商: Rohm Semiconductor
文件页数: 5/5页
文件大小: 0K
描述: MOSFET P-CH 20V 0.2A UMT6
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 200mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1.2 欧姆 @ 200mA,4.5V
Id 时的 Vgs(th)(最大): 1V @ 100µA
闸电荷(Qg) @ Vgs: 1.4nC @ 4.5V
输入电容 (Ciss) @ Vds: 115pF @ 10V
功率 - 最大: 150mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: UMT6
包装: 标准包装
其它名称: RZM002P02T2LDKR
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