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参数资料
| 型号： | RZM002P02T2L |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 4/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 0.2A UMT6 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 1.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 115pF @ 10V |
| 功率 - 最大： | 150mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | UMT6 |
| 包装： | 标准包装 |
| 其它名称： | RZM002P02T2LDKR |
RZM002P02
Data Sheet
1.0
V DS = -10V
1
V GS =0V
5
Ta=25°C
Pulsed
Pulsed
4
3
I D = -0.2A
Pulsed
Ta=-25°C
Ta=25°C
Ta=75°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
2
I D = -0.01A
Ta=125°C
Ta=-25°C
1
0.1
0.01
0
0.01
0.1
1
0
0.5
1
1.5
0
2
4
6
8
10
DRAIN-CURRENT : -I D [A]
Fig.10 Forward Transfer Admittance
vs. Drain Current
SOURCE-DRAIN VOLTAGE : -V SD [V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
Ta=25°C
5
1000
Ta=25°C
100
t d (off)
t f
V DD = -10V
V GS =-4.5V
R G =10 ?
Pulsed
4
100
f=1MHz
V GS =0V
Ciss
3
10
2
Ta=25°C
10
1
t r
t d (on)
1
0
V DD = -10V
I D = -0.2A
R G =10 ?
Pulsed
1
Coss
Crss
0.01
0.1
1
0
0.5
1
1.5
0.01
0.1
1
10
100
DRAIN-CURRENT : -I D [A]
Fig.13 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.14 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
Measurement circuit
Pulse width
V GS
I D
R L
V DS
V GS
10%
50%
50%
90%
D.U.T.
10%
10%
R G
V DD
V DS
t d(on)
90%
t r
t d(off)
90%
t f
t on
t off
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V G
V GS
I D
R L
V DS
V GS
Q g
I G (Const.)
R G
D.U.T.
V DD
Q gs
Q gd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.06 - Rev.B
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