参数资料
型号: S29GL256N80TFIV10
厂商: Spansion Inc.
英文描述: MirrorBit Flash Family
中文描述: MirrorBit闪存系列
文件页数: 66/110页
文件大小: 2624K
代理商: S29GL256N80TFIV10
May 13, 2004 27631A4
S29GLxxxN MirrorBitTM Flash Family
59
Ad va nc e
Inform ati o n
and requires VID on address pin A9. The autoselect command sequence may be
written to an address that is either in the read or erase-suspend-read mode. The
autoselect command may not be written while the device is actively programming
or erasing.
The autoselect command sequence is initiated by first writing two unlock cycles.
This is followed by a third write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system may read at any address any
number of times without initiating another autoselect command sequence:
A read cycle at address XX00h returns the manufacturer code.
Three read cycles at addresses 01h, 0Eh, and 0Fh return the device code.
A read cycle to an address containing a sector address (SA), and the address
02h on A7–A0 in word mode returns 01h if the sector is protected, or 00h if
it is unprotected.
The system must write the reset command to return to the read mode (or erase-
suspend-read mode if the device was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector Command Sequence
The SecSi Sector region provides a secured data area containing an 8-word/16-
byte random Electronic Serial Number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi Sector command sequence.
The device continues to access the SecSi Sector region until the system issues
the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector com-
mand sequence returns the device to normal operation. Table 12 and Table 13
show the address and data requirements for both command sequences. See also
“SecSi (Secured Silicon) Sector Flash Memory Region” for further information.
Note that the ACC function and unlock bypass modes are not available when the
SecSi Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is
initiated by writing two unlock write cycles, followed by the program set-up com-
mand. The program address and data are written next, which in turn initiate the
Embedded Program algorithm. The system is not required to provide further con-
trols or timings. The device automatically provides internally generated program
pulses and verifies the programmed cell margin. Table 12 and Table 13 show the
address and data requirements for the word program command sequence.
When the Embedded Program algorithm is complete, the device then returns to
the read mode and addresses are no longer latched. The system can determine
the status of the program operation by using DQ7 or DQ6. Refer to the Write Op-
eration Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm
are ignored. Note that the SecSi Sector, autoselect, and CFI functions are
unavailable when a program operation is in progress. Note that a hard-
ware reset immediately terminates the program operation. The program
command sequence should be reinitiated once the device has returned to the
read mode, to ensure data integrity.
Programming is allowed in any sequence of address locations and across sector
boundaries. Programming to the same word address multiple times without in-
tervening erases (incremental bit programming) requires a modified
programming method. For such application requirements, please contact your
local Spansion representative. Word programming is supported for backward
相关PDF资料
PDF描述
S29GL256N90TFIV10 MirrorBit Flash Family
S29GL256N10TFIV10 MirrorBit Flash Family
S29GL256N80FFIV10 MirrorBit Flash Family
S29AL008D55TFNR11 SSR OCMOS FET 350MA NO 8-DIP
S29AL008D70TFNR11 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相关代理商/技术参数
参数描述
S29GL256N90FFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 256M-Bit 32M x 8/16M x 16 90ns 64-Pin Fortified BGA Tray
S29GL256N90FFIR22 制造商:Spansion 功能描述:
S29GL256N90TFIR10 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 256Mbit 32M/16M x 8bit/16bit 90ns 56-Pin TSOP Tray 制造商:Spansion 功能描述:Flash - NOR IC
S29GL256N90TFIR2 制造商:Spansion 功能描述:
S29GL256N90TFIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 256M-Bit 32M x 8/16M x 16 90ns 56-Pin TSOP Tray 制造商:Spansion 功能描述:Flash - NOR IC