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| 型号： | SBAS16WT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 55K |
| 描述： | DIODE SWITCH 200MA 75V SOT323 |
| 标准包装： | 3,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 75V |
| 电流 - 平均整流 (Io)： | 200mA |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 150mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 6ns |
| 电流 - 在 Vr 时反向漏电： | 1µA @ 75V |
| 电容@ Vr, F： | 2pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70 |
| 包装： | 带卷 (TR) |
?
Semiconductor Components Industries, LLC, 2014
March, 2014? Rev. 11
1
Publication Order Number:
BAS16WT1/D
BAS16WT1G
Silicon Switching Diode
Features
?
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA
= 25
°C)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
100
V
Recurrent Peak Forward Current
IR
200
mA
Peak Forward Surge Current
Pulse Width = 10 s
IFM(surge)
500
mA
Total Power Dissipation,
One Diode Loaded TA
= 25
°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD
200
1.6
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction?to?Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
RJA
625
°C/W
http://onsemi.com
Device Package Shipping?
ORDERING INFORMATION
SC?70
CASE 419
STYLE 2
MARKING
DIAGRAM
BAS16WT1G SC?70
(Pb?Free)
3000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
A6 M
1
A6 = Specific Device Code
M = Date Code
= Pb?Free Package
(*Note: Microdot may be in either location)
SBAS16WT1G SC?70
(Pb?Free)
3000 / Tape & Reel
NSVBAS16WT3G SC?70
(Pb?Free)
10000 / Tape &
Reel
相关PDF资料 |
PDF描述 |
|---|---|
| SBAS16XV2T1G | DIODE SWITCH 200MA 75V SOD523 |
| SBAS20HT1G | DIODE SWITCH 200V 200MA SOD-323 |
| SBAS21LT3G | DIODE SWITCH 250V 200MA SOT-23 |
| SBAS40LT1G | DIODE SCHOTTKY 40V SOT23 |
| SBG1030L-T-F | DIODE SCHOTTKY 10A 30V D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBAS16XV2T1G | 功能描述:二极管 - 通用，功率，开关 SS SWITCHING DIODE RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SBAS20HT1G | 功能描述:二极管 - 通用，功率，开关 SS SWCH DIO 200V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SBAS20L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage Switching Diode |
| SBAS20LT1G | 功能描述:二极管 - 通用，功率，开关 SS SWCH DIO 200V TR RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SBAS21DW5 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage Switching Diode |
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