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参数资料
| 型号： | SFW9614 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | ADVANCED POWER MOSFET |
| 中文描述： | 1.6 A, 250 V, 4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | D2PAK-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 347K |
| 代理商： | SFW9614 |
SFW/I9614
BV
DSS = -250 V
R
DS(on) = 4.0
I
D = -1.6 A
-250
-1.6
-1.0
-6.5
112
-1.6
2.0
-4.8
3.1
20
0.16
- 55 to +150
300
6.25
40
62.5
--
30
+
_
ν Avalanche Rugged Technology
ν Rugged Gate Oxide Technology
ν Lower Input Capacitance
ν Improved Gate Charge
ν Extended Safe Operating Area
ν Lower Leakage Current : 10 A(Max.) @ V
DS = -250V
ν Low R
DS(ON) : 3.5 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
RθJC
RθJA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D2-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I2-PAK
*
* When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C=25
o
C)
Continuous Drain Current (T
C=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A=25
o
C)
Total Power Dissipation (T
C=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
Characteristic
Value
Units
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J , TSTG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
V
DSS
V
*
O
1
O
2
O
3
O
1
O
1
2001 Fairchild Semiconductor Corporation
Rev. B1
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PDF描述 |
|---|---|
| SFW9620 | Advanced Power MOSFET |
| SFW9630 | Advanced Power MOSFET |
| SFX-DM-15DM | INTERCONNECTION DEVICE |
| SFX-DMDM-1.5M | INTERCONNECTION DEVICE |
| SFX-NMNM-4 | INTERCONNECTION DEVICE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SFW9614TM | 功能描述:MOSFET P-CH/250V/1.6A/4OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9620 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFW9620TM | 功能描述:MOSFET PCh/200V/3.5a/1.5Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9624TM | 功能描述:MOSFET PCh/250V/2.7a/2.4Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9630 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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