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参数资料
| 型号： | SFW9614 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | ADVANCED POWER MOSFET |
| 中文描述： | 1.6 A, 250 V, 4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | D2PAK-3 |
| 文件页数： | 5/11页 |
| 文件大小： | 347K |
| 代理商： | SFW9614 |
SFW/I9614
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
-2
10
-1
10
0
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
s Pulse Test
-I
DR
,
Re
vers
e
D
rai
n
Cu
rre
nt
[A]
-V
SD
, Source-Drain Voltage
[V]
024
68
10
0
2
4
6
8
10
12
V
DS
= -200 V
V
DS
= -125 V
V
DS
= -50 V
@ Notes : I
D
= -1.6 A
-V
GS
,
Gat
e-S
ourc
e
V
olt
age
[
V
]
Q
G
, Total Gate Charge
[nC]
01234
56
0
2
4
6
8
10
12
@ Note : T
J
= 25
o
C
V
GS
= -20 V
V
GS
= -10 V
R
DS(o
n)
,
[
]
D
rai
n-
Sou
rce
On
-R
esi
sta
nce
-I
D
, Drain Current
[A]
24
68
10
-2
10
-1
10
0
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= -40 V
3. 250
s Pulse Test
-I
D
,
Drai
n
Curr
ent
[
A
]
-V
GS
, Gate-Source Voltage
[V]
10
-1
10
0
10
1
10
-2
10
-1
10
0
@ Notes :
1. 250
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top :
-15 V
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom : -4.5 V
-I
D
,
D
rai
n
Cur
ren
t
[A
]
-V
DS
, Drain-Source Voltage
[V]
10
0
10
1
0
100
200
300
400
C
iss= Cgs+ Cgd ( Cds= shorted )
C
oss= Cds+ Cgd
C
rss= Cgd
@ Notes :
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Ca
pa
ci
ta
nc
e
[
p
F
]
-V
DS
, Drain-Source Voltage [V]
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
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PDF描述 |
|---|---|
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| SFW9630 | Advanced Power MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SFW9614TM | 功能描述:MOSFET P-CH/250V/1.6A/4OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9620 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFW9620TM | 功能描述:MOSFET PCh/200V/3.5a/1.5Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9624TM | 功能描述:MOSFET PCh/250V/2.7a/2.4Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9630 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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