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参数资料
| 型号： | SFW9614 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | ADVANCED POWER MOSFET |
| 中文描述： | 1.6 A, 250 V, 4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | D2PAK-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 347K |
| 代理商： | SFW9614 |
SFW/I9614
-250
--
-2.0
--
-0.21
--
35
13
10
18
24
11
9
2.0
4.6
--
-4.0
-100
100
-10
-100
4.0
--
295
55
20
30
45
60
30
11
--
1.0
225
--
130
0.61
-1.6
-6.5
-4.0
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=70mH, I
AS=-1.6A, VDD=-50V, RG=27*, Starting TJ =25
oC
I
SD
-1.6A, di/dt
250A/
s, V
DD
BV
DSS , Starting TJ =25
oC
Pulse Test : Pulse Width = 250
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5
P-CHANNEL
POWER MOSFET
Electrical Characteristics (T
C=25
oC unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
BV/T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
o
C
V
nA
A
S
pF
ns
nC
--
V
GS=0V,ID=-250A
I
D=-250A
See Fig 7
V
DS=-5V,ID=-250A
V
GS=-30V
V
GS=30V
V
DS=-250V
V
DS=-200V,TC=125
o
C
V
GS=-10V,ID=0.8A
V
DS=-40V,ID=-0.8A
V
DD=-125V,ID=-1.6A,
R
G=24
See Fig 13
V
DS=-200V,VGS=-10V,
I
D=-1.6A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS=0V,VDS=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
A
V
ns
C
Integral reverse pn-diode
in the MOSFET
T
J=25
o
C,I
S=-1.6A,VGS=0V
T
J=25
o
C,I
F=-1.6A
di
F/dt=100A/s
O
4
O
4
O
5
O
4
O
4
O
5
O
1
O
4
O
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SFW9614TM | 功能描述:MOSFET P-CH/250V/1.6A/4OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9620 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFW9620TM | 功能描述:MOSFET PCh/200V/3.5a/1.5Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9624TM | 功能描述:MOSFET PCh/250V/2.7a/2.4Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9630 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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