参数资料
型号: SFW9614
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: ADVANCED POWER MOSFET
中文描述: 1.6 A, 250 V, 4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: D2PAK-3
文件页数: 6/11页
文件大小: 347K
代理商: SFW9614
SFW/I9614
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10 ms
DC
1 ms
0.1 ms
@ Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
-I
D
,
Dr
ai
n
Cu
rr
en
t
[A
]
-V
DS , Drain-Source Voltage
[V]
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
-I
D
,
Dr
ai
n
Cu
rr
en
t
[A
]
T
c , Case Temperature
[
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θ JC
(t)=6.25
o C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
θ JC
(t)
Z
θ
JC
(t)
,
T
herma
l
Re
spons
e
t
1
, Square Wave Pulse Duration
[sec]
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
@ Notes :
1. V
GS
= -10 V
2. I
D
= -0.8 A
R
DS(o
n)
,
(
Nor
ma
liz
ed
)
D
rai
n-S
ou
rce
O
n-R
es
ist
anc
e
T
J
, Junction Temperature
[
o
C]
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= -250
A
-B
V
DSS
,
(No
rm
al
ize
d)
D
r
a
in-
So
ur
ce
Br
ea
kdo
wn
Vo
lt
ag
e
T
J
, Junction Temperature
[
o
C]
P-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
Fig 9. Max. Safe Operating Area
P
DM
.
t
1.
t
2.
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SFW9620 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
SFW9620TM 功能描述:MOSFET PCh/200V/3.5a/1.5Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SFW9624TM 功能描述:MOSFET PCh/250V/2.7a/2.4Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SFW9630 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET