参数资料
型号: SGH40N60UFTU
厂商: Fairchild Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: IGBT HI PERFORM 600V 20A TO-3P
产品培训模块: High Voltage Switches for Power Processing
标准包装: 30
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.6V @ 15V,20A
电流 - 集电极 (Ic)(最大): 40A
功率 - 最大: 160W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-3P-3,SC-65-3
供应商设备封装: TO-3PN
包装: 管件
2500
Common Emitter
300
Common Emitter
2000
Cies
V GE = 0V, f = 1MHz
T C = 25 ℃
100
V CC = 300V, V GE = ± 15V
I C = 20A
T C = 25 ℃
T C = 125 ℃
Ton
Tr
1500
1000
Coes
500
Cres
0
10
1
10
30
1
10
100
200
Collector - Emitter Voltage, V CE [V]
Fig 7. Capacitance Characteristics
Gate Resistance, R G [ ? ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
2000
Common Emitter
V CC = 300V, V GE = ± 15V
I C = 20A
T C = 25 ℃
T C = 125 ℃
Toff
1000
V CC = 300V, V GE = ± 15V
I C = 20A
T C = 25 ℃
T C = 125 ℃
Eon
Eoff
Tf
Eon
Eoff
100
Tf
100
20
50
1
10
100
200
1
10
100
200
Gate Resistance, R G [ ? ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Gate Resistance, R G [ ? ]
Fig 10. Switching Loss vs. Gate Resistance
200
100
Ton
Common Emitter
1000
100
Common Emitter
V CC = 300V, V GE = ± 15V
R G = 10 ?
T C = 25 ℃
T C = 125 ℃
Toff
Tf
Toff
10
Tr
V CC = 300V, V GE = ± 15V
R G = 10 ?
T C = 25 ℃
T C = 125 ℃
20
Tf
10
15
20
25
30
35
40
10
15
20
25
30
35
40
Collector Current, I C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Collector Current, I C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
?2009 Fairchild Semiconductor Corporation
SGH40N60UF Rev. C1
4
www.fairchildsemi.com
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