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参数资料
| 型号： | SGP15N60RUFTU |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 620K |
| 代理商： | SGP15N60RUFTU |
2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
S
G
P15N60RUF
Electrical Characteristics of IGBT T
C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
600
--
V
B
VCES/
T
J
Temperature Coeff. of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/
°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
± 100
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 15mA, VCE = VGE
5.0
6.0
8.5
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 15A,
VGE = 15V
--
2.2
2.8
V
IC = 24A,
VGE = 15V
--
2.5
--
V
Dynamic Characteristics
Cies
Input Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
948
--
pF
Coes
Output Capacitance
--
101
--
pF
Cres
Reverse Transfer Capacitance
--
33
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 15A,
RG = 13, VGE = 15V,
Inductive Load, TC = 25°C
--
17
--
ns
tr
Rise Time
--
33
--
ns
td(off)
Turn-Off Delay Time
--
44
65
ns
tf
Fall Time
--
118
200
ns
Eon
Turn-On Switching Loss
--
320
--
uJ
Eoff
Turn-Off Switching Loss
--
356
--
uJ
Ets
Total Switching Loss
--
676
950
uJ
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 15A,
RG = 13, VGE = 15V,
Inductive Load, TC = 125°C
--
20
--
ns
tr
Rise Time
--
34
--
ns
td(off)
Turn-Off Delay Time
--
48
70
ns
tf
Fall Time
--
212
350
ns
Eon
Turn-On Switching Loss
--
340
--
uJ
Eoff
Turn-Off Switching Loss
--
695
--
uJ
Ets
Total Switching Loss
--
1035
1450
uJ
Tsc
Short Circuit Withstand Time
VCC = 300 V, VGE = 15V
@
TC = 100°C
10
--
us
Qg
Total Gate Charge
VCE = 300 V, IC = 15A,
VGE = 15V
--
42
60
nC
Qge
Gate-Emitter Charge
--
7
10
nC
Qgc
Gate-Collector Charge
--
17
24
nC
Le
Internal Emitter Inductance
Measured 5mm from PKG
--
7.5
--
nH
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|---|---|
| SGP15N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 31A 139W TO220-3 |
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| SGP20N60 | 功能描述:IGBT 晶体管 FAST IGBT NPT TECH 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGP20N60_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGP20N60HS | 功能描述:IGBT 晶体管 HIGH SPEED NPT TECH 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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