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参数资料
| 型号： | SGP15N60RUFTU |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 620K |
| 代理商： | SGP15N60RUFTU |
Product Folder - Fairchild P/N SGP15N60RUF - Discrete, Short Circuit Rated IGBT
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SGP15N60RUF
Discrete, Short Circuit Rated IGBT
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Contents
General description
Fairchild's Insulated Gate Bipolar
Transistor(IGBT) RUF series provides low
conduction and switching losses as well as
short circuit ruggedness. RUF series is
designed for the applications such as motor
control, UPS and general inverters where short-
circuit ruggedness is required.
Features
q
Short Circuit rated 10us @ T C =
100°C, GE = 15V
q
High Speed Switching
q
Low Saturation Voltage : V CE(sat) = 2.2
V @ I C = 15A
q
High Input Impedance
Applications
AC &DC Motor controls,General
Purpose Inverters, Robotics, Servo
Controls
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Datasheet
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相关代理商/技术参数 |
参数描述 |
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| SGP15N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 31A 139W TO220-3 |
| SGP18C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:GPS SMT Patch Antenna |
| SGP20N60 | 功能描述:IGBT 晶体管 FAST IGBT NPT TECH 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGP20N60_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGP20N60HS | 功能描述:IGBT 晶体管 HIGH SPEED NPT TECH 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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