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参数资料
| 型号： | SGP15N60RUFTU |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 620K |
| 代理商： | SGP15N60RUFTU |
2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
S
G
P15N60RUF
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
110
0
300
600
900
1200
1500
1800
Cres
Coes
Cies
Common Emitter
V
GE = 0V, f = 1MHz
T
C = 25
℃
C
a
p
a
cit
ance
[
p
F
]
Collector - Emitter Voltage, V
CE [V]
110
100
10
100
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 15A
T
C =
25℃ ━━
T
C = 125
℃ ------
Ton
Tr
S
w
it
ching
T
im
e
[ns]
Gate Resistance, R
G [ ]
110
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 15A
T
C =
25℃ ━━
T
C = 125
℃ ------
S
w
it
c
h
in
g
T
im
e
[n
s
]
Gate Resistance, R
G [ ]
110
100
1000
Eoff
Eon
Eoff
Common Emitter
V
CC = 300V, VGE =
± 15V
I
C = 15A
T
C =
25℃ ━━
T
C = 125
℃ ------
S
w
it
c
h
in
g
L
o
s
[
u
J
]
Gate Resistance, R
G [ ]
5
101520
2530
10
100
Ton
Tr
Common Emitter
V
GE =
± 15V, R
G = 13
T
C =
25℃ ━━
T
C = 125
℃ ------
S
w
it
c
h
in
g
T
im
e
[n
s
]
Collector Current, I
C [A]
5
10
15
202530
100
1000
Tf
Toff
Tf
Common Emitter
V
GE =
± 15V, R
G = 13
T
C =
25℃ ━━
T
C = 125
℃ ------
S
w
itc
h
in
g
T
im
e
[n
s
]
Collector Current, I
C [A]
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SGP15N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 31A 139W TO220-3 |
| SGP18C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:GPS SMT Patch Antenna |
| SGP20N60 | 功能描述:IGBT 晶体管 FAST IGBT NPT TECH 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGP20N60_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGP20N60HS | 功能描述:IGBT 晶体管 HIGH SPEED NPT TECH 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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