- 您现在的位置：买卖IC网 > PDF目录192947 > SGP15N60RUFTU (FAIRCHILD SEMICONDUCTOR CORP) PDF资料下载
参数资料
| 型号： | SGP15N60RUFTU |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 620K |
| 代理商： | SGP15N60RUFTU |
2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
S
G
P15N60RUF
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
1
10
100
1000
1
10
100
Safe Operating Area
V
GE = 20V, TC = 100
℃
C
o
lle
c
to
rC
u
rr
e
n
t,
I C
[A
]
Collector-Emitter Voltage, V
CE [V]
5
10
1520
2530
100
1000
Eoff
Eon
Eoff
Common Emitter
V
GE =
± 15V, R
G = 13
T
C =
25℃ ━━
T
C = 125
℃ ------
Sw
it
ch
in
g
Los
s
[u
J
]
Collector Current, I
C [A]
0
102030
4050
0
3
6
9
12
15
200 V
V
CC = 100 V
300 V
Common Emitter
R
L = 20
T
C = 25
℃
G
a
te
-
E
m
itte
r
V
o
lta
g
e
,
V
GE
[
V
]
Gate Charge, Q
g [ nC ]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
T
h
erm
a
lRes
p
on
se,
Zth
jc
[
℃
/W
]
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
× Zthjc + T
C
0.1
1
10
100
1000
0.1
1
10
100
Single Nonrepetitive
Pulse T
C = 25
℃
Curves must be derated
linearly with increase
in temperature
I
C MAX. (Continuous)
I
C MAX. (Pulsed)
DC Operation
1
100us
50us
Col
le
ct
or
Cu
rr
en
t,
I
C
[A
]
Collector-Emitter Voltage, V
CE [V]
相关PDF资料 |
PDF描述 |
|---|---|
| SGRF100-12 | RF RELAY, DPDT, MOMENTARY, 0.031A (COIL), 12VDC (COIL), 372mW (COIL), SURFACE MOUNT-STRAIGHT |
| SGRF100-5 | RF RELAY, DPDT, MOMENTARY, 0.1A (COIL), 5VDC (COIL), 500mW (COIL), SURFACE MOUNT-STRAIGHT |
| SGRF103-12 | RF RELAY, DPDT, MOMENTARY, 0.015A (COIL), 12VDC (COIL), 180mW (COIL), SURFACE MOUNT-STRAIGHT |
| SGRF103-5 | RF RELAY, DPDT, MOMENTARY, 0.05A (COIL), 5VDC (COIL), 250mW (COIL), SURFACE MOUNT-STRAIGHT |
| SGRF303-12 | RF RELAY, DPDT, MOMENTARY, 0.014A (COIL), 12VDC (COIL), 169mW (COIL), 1A (CONTACT), 28VDC (CONTACT), SURFACE MOUNT-STRAIGHT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SGP15N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 31A 139W TO220-3 |
| SGP18C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:GPS SMT Patch Antenna |
| SGP20N60 | 功能描述:IGBT 晶体管 FAST IGBT NPT TECH 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGP20N60_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGP20N60HS | 功能描述:IGBT 晶体管 HIGH SPEED NPT TECH 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。