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参数资料
| 型号： | SGP15N60RUFTU |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 620K |
| 代理商： | SGP15N60RUFTU |
2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
S
G
P15N60RUF
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. VGE
Fig 6. Saturation Voltage vs. VGE
02
4
6
8
0
5
10
15
20
25
30
35
40
45
50
20V
12V
15V
V
GE = 10V
Common Emitter
T
C = 25
℃
C
o
llect
o
rC
u
rr
en
t,
I C
[A
]
Collector - Emitter Voltage, V
CE [V]
110
0
5
10
15
20
25
30
35
40
45
Common Emitter
V
GE = 15V
T
C =
25℃ ━━
T
C = 125
℃ ------
C
o
llec
to
rC
u
rre
n
t,
I
C
[A
]
Collector - Emitter Voltage, V
CE [V]
-50
0
50
100
150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
30A
15A
I
C = 8A
Common Emitter
V
GE = 15V
Col
le
c
tor
-Em
itter
Vo
lt
age,
V
CE
[V
]
Case Temperature, T
C [
℃]
04
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C = 25
℃
30A
15A
I
C = 7A
Col
le
c
to
r-
Em
it
te
r
Vo
lt
ag
e
,V
CE
[V
]
Gate - Emitter Voltage, V
GE [V]
0
4
8
121620
0
4
8
12
16
20
Common Emitter
T
C = 125
℃
30A
15A
I
C = 7A
Co
lle
c
tor
-
E
m
itter
Vo
lt
age,
V
CE
[V
]
Gate - Emitter Voltage, V
GE [V]
0
4
8
12
16
20
24
0.1
1
10
100
1000
Duty cycle : 50%
T
C = 100
℃
Power Dissipation = 25W
V
CC = 300V
Load Current : peak of square wave
Frequency [KHz]
Lo
ad
C
u
rr
e
n
t
[A
]
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相关代理商/技术参数 |
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|---|---|
| SGP15N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 31A 139W TO220-3 |
| SGP18C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:GPS SMT Patch Antenna |
| SGP20N60 | 功能描述:IGBT 晶体管 FAST IGBT NPT TECH 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGP20N60_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGP20N60HS | 功能描述:IGBT 晶体管 HIGH SPEED NPT TECH 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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