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| 型号： | SI1031R-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 140MA SC-75A |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 140mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 欧姆 @ 150mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 4.5V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-75A |
| 供应商设备封装： | SC-75A |
| 包装： | 标准包装 |
| 其它名称： | SI1031R-T1-GE3DKR |
Si1031R/X
Vishay Siliconix
SPECIFICATIONS (T A = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
V GS(th)
I GSS
I DSS
I D(on)
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 2.8 V
V DS = 0 V, V GS = ± 4.5 V
V DS = - 16 V, V GS = 0 V
V DS = - 16 V, V GS = 0 V, T J = 85 °C
V DS = - 5 V, V GS = - 4.5 V
- 0.40
- 200
± 0.5
± 1.0
-1
- 1.2
± 1.0
± 2.0
- 500
- 10
V
μA
nA
μA
mA
V GS = - 4.5 V, I D = - 150 mA
8
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 125 mA
V GS = - 1.8 V, I D = - 100 mA
12
15
?
V GS = - 1.5 V, I D = - 30 mA
20
Forward Transconductance a
g fs
V DS = - 10 V, I D = 150 mA
0.4
S
Diode Forward
Voltage a
V SD
I S = - 150 mA, V GS = 0 V
- 1.2
V
Dynamic b
Total Gate Charge
Q g
1500
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q gs
Q gd
t d(on)
t r
t d(off)
t f
V DS = - 10 V, V GS = - 4.5 V, I D = - 150 mA
V DD = - 10 V, R L = 65 ?
I D ? - 150 mA, V GEN = - 4.5 V, R g = 10 ?
150
450
55
30
60
30
pC
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
0.5
500
V GS = 5 V thr u 2.5 V
2 V
T J = - 55 °C
0.4
400
25 °C
125 °C
1. 8 V
0.3
0.2
0.1
0.0
300
200
100
0
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
www.vishay.com
2
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
Document Number: 71171
S10-2544-Rev. D, 08-Nov-10
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