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参数资料
| 型号： | SI1046R-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 606MA SC75-3 |
| 产品目录绘图： | SC75(A), SC89-3, SOT-23, SOT-323 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 420 毫欧 @ 606mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.49nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 66pF @ 10V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-75A |
| 供应商设备封装： | SC-75A |
| 包装： | 标准包装 |
| 产品目录页面： | 1661 (CN2011-ZH PDF) |
| 其它名称： | SI1046R-T1-GE3DKR |
Si1046R
Vishay Siliconix
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
10
1.0
I D = 0.606 A
0. 8
1
0.1
0.01
0.001
T J = 150 °C
T J = 25 °C
0.6
0.4
0.2
0.0
T A = 125 °C
T A = 25 °C
0
0.3
0.6
0.9
1.2
0
1
2
3
4
5
1.0
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
10
V GS - Gate-to-So u rce V oltage ( V )
R DS(on) vs. V GS vs Temperature
Limited b y R DS(on) *
1 ms
0. 8
I D = 250 μ A
1
10 ms
100 ms
0.6
0.4
0.2
0.1
0.01
0.001
T A = 25 °C
Single P u lse
1s
10 s
DC
- 50
- 25
0
25
50
75
100
125
150
0.1
1
10
100
T J - Temperat u re (°C)
Threshold Voltage
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
2
1
D u ty Cycle = 0.5
0.2
N otes:
0.1
0.1
0.05
P DM
t 1
t 1
0.01
0.02
Single P u lse
t 2
1. D u ty Cycle, D =
t 2
2. Per Unit Base = R thJA = 540 °C/ W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
10 -4
10 -3
10 -2
10 -1
1
1 0
100
6 0 0
S qu are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74595 .
www.vishay.com
4
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 74595
S13-0195-Rev. D, 28-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI1046X | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI1046X-T1-E3 | 功能描述:MOSFET 20V 0.606A 0.25W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1046X-T1-GE3 | 功能描述:MOSFET 20V 606mA 0.25W 420mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI104-820 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SMT Power Inductor |
| SI104-820K | 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor |
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